Short-channel BEOL ZnON thin-film transistors with superior mobility performance

Chin I. Kuan; Horng-Chih Lin; Pei-Wen Li; Tiao Yuan Huang

doi:10.1109/VLSI-TSA.2016.7480533

Short-channel BEOL ZnON thin-film transistors with superior mobility performance

Chin I. Kuan, Horng-Chih Lin, Pei-Wen Li, Tiao Yuan Huang

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

This work reports the first experimental submicron and sub-100 nm ZnON TFTs with excellent performance. Field-effect mobility values as high as 55 and 9.2 cm2/V-s were measured from ZnON TFTs with channel lengths of 0.5 μm and 75 nm, respectively. Those are the highest values ever reported on oxide-semiconductor TFTs of comparable channel length. The results confirm ZnON TFTs as an effective building block for the construction of BEOL circuits integrated in a chip.

Original language	American English
Title of host publication	2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467394789
DOIs	https://doi.org/10.1109/VLSI-TSA.2016.7480533
State	Published - 27 May 2016
Event	International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 - Hsinchu, Taiwan Duration: 25 Apr 2016 → 27 Apr 2016

Publication series

Name	2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

Conference

Conference	International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
Country/Territory	Taiwan
City	Hsinchu
Period	25/04/16 → 27/04/16

Keywords

Thin film transistors
Zinc oxide
II-VI semiconductor materials
Films
Performance evaluation
Photonic band gap
Semiconductor device measurement

Access to Document

10.1109/VLSI-TSA.2016.7480533

Cite this

Kuan, C. I., Lin, H.-C., Li, P.-W., & Huang, T. Y. (2016). Short-channel BEOL ZnON thin-film transistors with superior mobility performance. In 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 Article 7480533 (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2016.7480533

Kuan, Chin I. ; Lin, Horng-Chih ; Li, Pei-Wen et al. / Short-channel BEOL ZnON thin-film transistors with superior mobility performance. 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016).

@inproceedings{7143fcc9236248b1b77ef38b33cbeb71,

title = "Short-channel BEOL ZnON thin-film transistors with superior mobility performance",

abstract = "This work reports the first experimental submicron and sub-100 nm ZnON TFTs with excellent performance. Field-effect mobility values as high as 55 and 9.2 cm2/V-s were measured from ZnON TFTs with channel lengths of 0.5 μm and 75 nm, respectively. Those are the highest values ever reported on oxide-semiconductor TFTs of comparable channel length. The results confirm ZnON TFTs as an effective building block for the construction of BEOL circuits integrated in a chip.",

keywords = "Thin film transistors, Zinc oxide, II-VI semiconductor materials, Films, Performance evaluation, Photonic band gap, Semiconductor device measurement",

author = "Kuan, {Chin I.} and Horng-Chih Lin and Pei-Wen Li and Huang, {Tiao Yuan}",

year = "2016",

month = may,

day = "27",

doi = "10.1109/VLSI-TSA.2016.7480533",

language = "American English",

series = "2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016",

address = "United States",

note = "International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 ; Conference date: 25-04-2016 Through 27-04-2016",

}

Kuan, CI, Lin, H-C , Li, P-W & Huang, TY 2016, Short-channel BEOL ZnON thin-film transistors with superior mobility performance. in 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016., 7480533, 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016, Institute of Electrical and Electronics Engineers Inc., International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016, Hsinchu, Taiwan, 25/04/16. https://doi.org/10.1109/VLSI-TSA.2016.7480533

Short-channel BEOL ZnON thin-film transistors with superior mobility performance. / Kuan, Chin I.; Lin, Horng-Chih ; Li, Pei-Wen et al.
2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7480533 (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Short-channel BEOL ZnON thin-film transistors with superior mobility performance

AU - Kuan, Chin I.

AU - Lin, Horng-Chih

AU - Li, Pei-Wen

AU - Huang, Tiao Yuan

PY - 2016/5/27

Y1 - 2016/5/27

N2 - This work reports the first experimental submicron and sub-100 nm ZnON TFTs with excellent performance. Field-effect mobility values as high as 55 and 9.2 cm2/V-s were measured from ZnON TFTs with channel lengths of 0.5 μm and 75 nm, respectively. Those are the highest values ever reported on oxide-semiconductor TFTs of comparable channel length. The results confirm ZnON TFTs as an effective building block for the construction of BEOL circuits integrated in a chip.

AB - This work reports the first experimental submicron and sub-100 nm ZnON TFTs with excellent performance. Field-effect mobility values as high as 55 and 9.2 cm2/V-s were measured from ZnON TFTs with channel lengths of 0.5 μm and 75 nm, respectively. Those are the highest values ever reported on oxide-semiconductor TFTs of comparable channel length. The results confirm ZnON TFTs as an effective building block for the construction of BEOL circuits integrated in a chip.

KW - Thin film transistors

KW - Zinc oxide

KW - II-VI semiconductor materials

KW - Films

KW - Performance evaluation

KW - Photonic band gap

KW - Semiconductor device measurement

UR - http://www.scopus.com/inward/record.url?scp=84978732955&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2016.7480533

DO - 10.1109/VLSI-TSA.2016.7480533

M3 - Conference contribution

AN - SCOPUS:84978732955

T3 - 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

BT - 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

Y2 - 25 April 2016 through 27 April 2016

ER -

Kuan CI, Lin HC , Li PW, Huang TY. Short-channel BEOL ZnON thin-film transistors with superior mobility performance. In 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7480533. (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016). doi: 10.1109/VLSI-TSA.2016.7480533

Short-channel BEOL ZnON thin-film transistors with superior mobility performance

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Keywords

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