Shape-controlled single-crystal growth of InP at low temperatures down to 220°C

Mark Hettick, Hao Li, Der-Hsien Lien, Matthew Yeh, Tzu Yi Yang, Matin Amani, Niharika Gupta, Daryl C. Chrzan, Yu Lun Chueh, Ali Javey*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


III-V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III-Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6°C for indium), previous experiments required a minimum growth temperature of 500°C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220°C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)-coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III-Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

Original languageEnglish
Pages (from-to)902-906
Number of pages5
JournalProceedings of the National Academy of Sciences of the United States of America
Issue number2
StatePublished - 14 Jan 2020


  • Growth
  • III-V semiconductors
  • InP
  • Low temperature
  • Single crystal


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