SHALLOW AND PARALLEL SILICIDE CONTACTS.

King-Ning Tu

doi:10.1116/1.571147

SHALLOW AND PARALLEL SILICIDE CONTACTS.

King-Ning Tu^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

42 Scopus citations

Abstract

Ways of making silicide contacts to Si which have a contact depth of about 10 nm are reviewed. Both Si alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0. 85 to 0. 75 ev) and low (0. 50 to 0. 40 ev) Schottky contacts have been demonstrated. Shallow contacts may not be uniform over the entire contact area due to nonuniform interfacial reaction, so nonuniform contacts consisting of a high barrier silicide and a low barrier silicide in parallel were analyzed.

Original language	English
Pages (from-to)	766-777
Number of pages	12
Journal	Journal of vacuum science & technology
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.571147
State	Published - 1 Jan 1981
Event	Proc of the Annu Symp of the Greater New York Chapter of the AVS on Metall of Adv Semicond Devices, 12th - Murray Hill, NJ, USA Duration: 3 Jun 1981 → 3 Jun 1981

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title = "SHALLOW AND PARALLEL SILICIDE CONTACTS.",

abstract = "Ways of making silicide contacts to Si which have a contact depth of about 10 nm are reviewed. Both Si alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0. 85 to 0. 75 ev) and low (0. 50 to 0. 40 ev) Schottky contacts have been demonstrated. Shallow contacts may not be uniform over the entire contact area due to nonuniform interfacial reaction, so nonuniform contacts consisting of a high barrier silicide and a low barrier silicide in parallel were analyzed.",

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year = "1981",

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doi = "10.1116/1.571147",

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N2 - Ways of making silicide contacts to Si which have a contact depth of about 10 nm are reviewed. Both Si alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0. 85 to 0. 75 ev) and low (0. 50 to 0. 40 ev) Schottky contacts have been demonstrated. Shallow contacts may not be uniform over the entire contact area due to nonuniform interfacial reaction, so nonuniform contacts consisting of a high barrier silicide and a low barrier silicide in parallel were analyzed.

AB - Ways of making silicide contacts to Si which have a contact depth of about 10 nm are reviewed. Both Si alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0. 85 to 0. 75 ev) and low (0. 50 to 0. 40 ev) Schottky contacts have been demonstrated. Shallow contacts may not be uniform over the entire contact area due to nonuniform interfacial reaction, so nonuniform contacts consisting of a high barrier silicide and a low barrier silicide in parallel were analyzed.

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DO - 10.1116/1.571147

M3 - Conference article

AN - SCOPUS:0019607740

VL - 19

SP - 766

EP - 777

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

IS - 3

Y2 - 3 June 1981 through 3 June 1981

ER -

SHALLOW AND PARALLEL SILICIDE CONTACTS.

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