SHALLOW AND PARALLEL SILICIDE CONTACTS.

King-Ning Tu*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

42 Scopus citations

Abstract

Ways of making silicide contacts to Si which have a contact depth of about 10 nm are reviewed. Both Si alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0. 85 to 0. 75 ev) and low (0. 50 to 0. 40 ev) Schottky contacts have been demonstrated. Shallow contacts may not be uniform over the entire contact area due to nonuniform interfacial reaction, so nonuniform contacts consisting of a high barrier silicide and a low barrier silicide in parallel were analyzed.

Original languageEnglish
Pages (from-to)766-777
Number of pages12
JournalJournal of vacuum science & technology
Volume19
Issue number3
DOIs
StatePublished - 1 Jan 1981
EventProc of the Annu Symp of the Greater New York Chapter of the AVS on Metall of Adv Semicond Devices, 12th - Murray Hill, NJ, USA
Duration: 3 Jun 19813 Jun 1981

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