Sensitivity improvements of HfxWyOz sensing membranes for pK sensors based on electrolyte-insulator-semiconductor structure

Wen Yu Chung*, Chia Ming Yang, Tseng Fu Lu, Chao Sung Lai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, the hydrogen ion and potassium ion sensing properties of mixing hafnium oxide-tungsten oxide (HfxWyOz) membranes on an electrolyte-insulator-semiconductor (EIS) structure by co-sputtering method were investigated. For tungsten oxide, the increasing of pH-sensitivity (35.47 mV/pH to 46.22 mV/pH), linearity (98.11% to 99.87%), measuring range (pH 6-pH 12 to pH 2-pH 12) and the decreasing of hysteresis (17.63 mV to 2.34 mV) were observed with increasing the ratio of hafnium oxide incorporation. For hafnium oxide, an increasing of pK-sensitivity (7.07 mV mV/ pK to 26.84 mV/ pK in the concentration range between 1 mM to 100 mM) was observed with increasing the ratio of tungsten oxide incorporation. For potassium ion detection, the HfxWyOz (HfO 2-60%) sensing membrane with good pK sensitivity (26.84 mV/pK) and high linearity (99.67%) in the concentration range between 1 mM and 100 mM and with good selectivity (low pH-sensitivity) over hydrogen ion was chosen as the optimal condition for pK sensor application.

Original languageEnglish
Title of host publicationIEEE Sensors 2009 Conference - SENSORS 2009
Pages1124-1127
Number of pages4
DOIs
StatePublished - 2009
EventIEEE Sensors 2009 Conference - SENSORS 2009 - Christchurch, New Zealand
Duration: 25 Oct 200928 Oct 2009

Publication series

NameProceedings of IEEE Sensors

Conference

ConferenceIEEE Sensors 2009 Conference - SENSORS 2009
Country/TerritoryNew Zealand
CityChristchurch
Period25/10/0928/10/09

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