Original language | English |
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Patent number | US 8,482,304 B2 |
State | Published - 9 Jul 2013 |
SENSING ELEMENT INTEGRATING SILICON NANOWIRE GATED-DIODES, MANUFACTURING METHOD AND DETECTING SYSTEM THEREOF
Jeng-Tzong Sheu (Inventor)
Research output: Patent
Jeng-Tzong Sheu (Inventor)
Research output: Patent
Original language | English |
---|---|
Patent number | US 8,482,304 B2 |
State | Published - 9 Jul 2013 |