Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser

Y. P. Huang; H. C. Liang; J. Y. Huang; Kuan-Wei Su; A. Li; Yung-Fu Chen; Kai-Feng Huang

doi:10.1364/AO.46.006273

Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser

Y. P. Huang, H. C. Liang, J. Y. Huang, Kuan-Wei Su, A. Li, Yung-Fu Chen^*, Kai-Feng Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 μJ at a pulse repetition rate of 55 kHz.

Original language	English
Pages (from-to)	6273-6276
Number of pages	4
Journal	Applied Optics
Volume	46
Issue number	25
DOIs	https://doi.org/10.1364/AO.46.006273
State	Published - 1 Sep 2007

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abstract = "InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 μJ at a pulse repetition rate of 55 kHz.",

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AU - Su, Kuan-Wei

AU - Li, A.

AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

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AB - InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 μJ at a pulse repetition rate of 55 kHz.

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Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser

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