Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

Swatilekha Majumdar*, Ying Chen, Boris Hudec, Tuo Hung Hou, Manan Suri

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO σ/Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved.

Original languageEnglish
Article number8972592
Pages (from-to)1348-1352
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - Mar 2020


  • Compact model
  • non-filamentary oxide-based random access memory (OxRAM)
  • OxRAM
  • resistive switching


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