TY - JOUR
T1 - Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices
AU - Majumdar, Swatilekha
AU - Chen, Ying
AU - Hudec, Boris
AU - Hou, Tuo Hung
AU - Suri, Manan
PY - 2020/3
Y1 - 2020/3
N2 - In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO σ/Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved.
AB - In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO σ/Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved.
KW - Compact model
KW - non-filamentary oxide-based random access memory (OxRAM)
KW - OxRAM
KW - resistive switching
UR - http://www.scopus.com/inward/record.url?scp=85080960574&partnerID=8YFLogxK
U2 - 10.1109/TED.2020.2964113
DO - 10.1109/TED.2020.2964113
M3 - Article
AN - SCOPUS:85080960574
SN - 0018-9383
VL - 67
SP - 1348
EP - 1352
JO - Ieee Transactions On Electron Devices
JF - Ieee Transactions On Electron Devices
IS - 3
M1 - 8972592
ER -