Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory

Chung Wei Hsu, I. Ting Wang, Chun Li Lo, Ming Chung Chiang, Wen Yueh Jang, Chen Hsi Lin, Tuo-Hung Hou

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    113 Scopus citations

    Abstract

    To satisfy strict requirements of storage-class memory, a bipolar TaO x/TiO2 RRAM has been developed. Numerous highly desired features, including: (1) extremely high endurance over 1012 cycles, (2) forming free, (3) self compliance, (4) self rectification ratio up to 105 required for ultrahigh-density 3D vertical RRAM, (5) multiple-level-per-cell capability, (6) room-temperature process, and (7) fab-friendly materials, have been demonstrated simultaneously for the first time.

    Original languageEnglish
    Title of host publication2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
    Chapter12-3
    PagesT166-T167
    Number of pages2
    StatePublished - 11 Jun 2013
    Event2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan
    Duration: 11 Jun 201313 Jun 2013

    Publication series

    NameDigest of Technical Papers - Symposium on VLSI Technology
    ISSN (Print)0743-1562

    Conference

    Conference2013 Symposium on VLSI Technology, VLSIT 2013
    Country/TerritoryJapan
    CityKyoto
    Period11/06/1313/06/13

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