Self-protected LDMOS output device with embedded SCR to improve ESD robustness in 0.25-μm 60-V BCD process

Yu Ching Huang; Chia Tsen Dai; Ming-Dou Ker

doi:10.1109/ISNE.2013.6512308

Self-protected LDMOS output device with embedded SCR to improve ESD robustness in 0.25-μm 60-V BCD process

Yu Ching Huang, Chia Tsen Dai, Ming-Dou Ker

Research output: Contribution to conference › Paper › peer-review

22 Scopus citations

Abstract

For high-voltage output driver, the lateral DMOS (LDMOS) is often used for both output function operation and self-protection against electrostatic discharge (ESD) events. In this work, a new structure of LDMOS output device with embedded SCR has been proposed and verified in a 0.25-μm 60-V BCD process. This new structure, with additional p+ and n+ implantation regions added between the drain contact and poly-gate of LDMOS, can keep it stably in the high-current holding region after snapback. By using this structure, the LDMOS can provide high enough self-protected ESD robustness for applications in the high-voltage output drivers.

Original language	English
Pages	116-119
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2013.6512308
State	Published - 27 May 2013
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan Duration: 25 Feb 2013 → 26 Feb 2013

Conference

Conference	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	25/02/13 → 26/02/13

Keywords

Electrostatic discharges (ESD)
lateral diffused MOS (LDMOS)
silicon-controlled rectifier (SCR)

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10.1109/ISNE.2013.6512308

Cite this

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title = "Self-protected LDMOS output device with embedded SCR to improve ESD robustness in 0.25-μm 60-V BCD process",

abstract = "For high-voltage output driver, the lateral DMOS (LDMOS) is often used for both output function operation and self-protection against electrostatic discharge (ESD) events. In this work, a new structure of LDMOS output device with embedded SCR has been proposed and verified in a 0.25-μm 60-V BCD process. This new structure, with additional p+ and n+ implantation regions added between the drain contact and poly-gate of LDMOS, can keep it stably in the high-current holding region after snapback. By using this structure, the LDMOS can provide high enough self-protected ESD robustness for applications in the high-voltage output drivers.",

keywords = "Electrostatic discharges (ESD), lateral diffused MOS (LDMOS), silicon-controlled rectifier (SCR)",

author = "Huang, {Yu Ching} and Dai, {Chia Tsen} and Ming-Dou Ker",

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doi = "10.1109/ISNE.2013.6512308",

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AU - Huang, Yu Ching

AU - Dai, Chia Tsen

AU - Ker, Ming-Dou

PY - 2013/5/27

Y1 - 2013/5/27

N2 - For high-voltage output driver, the lateral DMOS (LDMOS) is often used for both output function operation and self-protection against electrostatic discharge (ESD) events. In this work, a new structure of LDMOS output device with embedded SCR has been proposed and verified in a 0.25-μm 60-V BCD process. This new structure, with additional p+ and n+ implantation regions added between the drain contact and poly-gate of LDMOS, can keep it stably in the high-current holding region after snapback. By using this structure, the LDMOS can provide high enough self-protected ESD robustness for applications in the high-voltage output drivers.

AB - For high-voltage output driver, the lateral DMOS (LDMOS) is often used for both output function operation and self-protection against electrostatic discharge (ESD) events. In this work, a new structure of LDMOS output device with embedded SCR has been proposed and verified in a 0.25-μm 60-V BCD process. This new structure, with additional p+ and n+ implantation regions added between the drain contact and poly-gate of LDMOS, can keep it stably in the high-current holding region after snapback. By using this structure, the LDMOS can provide high enough self-protected ESD robustness for applications in the high-voltage output drivers.

KW - Electrostatic discharges (ESD)

KW - lateral diffused MOS (LDMOS)

KW - silicon-controlled rectifier (SCR)

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DO - 10.1109/ISNE.2013.6512308

M3 - Paper

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EP - 119

T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

Self-protected LDMOS output device with embedded SCR to improve ESD robustness in 0.25-μm 60-V BCD process

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Keywords

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