Self-Organized Ge Nanospherical Gate/SiO 2 /Si 0.15 Ge 0.85 -Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio

Po Hsiang Liao, Kang Ping Peng, Horng-Chih Lin, Thomas George, Pei-Wen Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Physics