Self-Organized Ge Nanospherical Gate/SiO ₂ /Si _0.15 Ge _0.85 -Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio

Keyphrases

• Silica 100%
• Drain Current 100%
• Nanosheets 100%
• Current Ratio 100%
• NFET 100%
• Nanospherical 100%
• Heterostructure 66%
• Gate Stack 66%
• Subthreshold Slope 33%
• NMOSFET 33%
• Tunability 33%
• Channel Length 33%
• Compressive Strain 33%
• Oxygen Concentration 33%
• Gate Oxide Thickness 33%
• Gate Modulation 33%
• Control Dynamics 33%
• Experimental Fabrication 33%
• Dynamic Balance 33%
• Self-organization Approach 33%
• Experimental Characterization 33%

Material Science

• Field Effect Transistor 100%
• Nanosheet 100%
• Heterojunction 66%
• Oxide Compound 33%
• Oxidation Reaction 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%

Physics

• Nanosheet 100%
• Heterojunctions 66%
• Stacking 66%
• Field Effect Transistor 33%
• Self Organization 33%