Self-matched ESD cell in CMOS technology for 60-GHz broadband RF applications

Chun Yu Lin*, Li Wei Chu, Ming-Dou Ker, Tse Hua Lu, Ping Fang Hung, Hsiao Chun Li

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    15 Scopus citations

    Abstract

    A self-matched ESD cell library has been implemented in a commercial sub-100nm CMOS process for 60-GHz broadband RF applications. This ESD cell library has reached the 50-Ω input/output matching to reduce the design complexity for RF circuit designer and to provide suitable electrostatic discharge (ESD) protection. Experimental results of this ESD cell library have successfully verified the ESD robustness and the RF characteristics in the 60-GHz frequency band. This self-matched ESD cell library is easily to be used for ESD protection design in the 60-GHz broadband RF applications.

    Original languageEnglish
    Title of host publicationProceedings of the 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010
    Pages573-576
    Number of pages4
    DOIs
    StatePublished - 16 Jul 2010
    Event2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010 - Anaheim, CA, United States
    Duration: 23 May 201025 May 2010

    Publication series

    NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
    ISSN (Print)1529-2517

    Conference

    Conference2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010
    Country/TerritoryUnited States
    CityAnaheim, CA
    Period23/05/1025/05/10

    Keywords

    • 60 GHz
    • Broadband
    • Electrostatic discharge (ESD)
    • ESD cell
    • V-band

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