Self-heating enhanced impact ionization in SOI MOSFETs

Pin Su; K. Goto; T. Sugii; Chen-Ming Hu

doi:10.1109/SOIC.2001.957970

Self-heating enhanced impact ionization in SOI MOSFETs

Pin Su^*, K. Goto, T. Sugii, Chen-Ming Hu

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

14 Scopus citations

Abstract

A self-heating enhanced impact-ionization phenomenon in SOI MOSFETs was analyzed. The self-heating effect provides carrier heating which determines impact ionization. Co-processed bulk and PD SOI MOSFETs were investigated using 0.13 μm technology. More impact ionization current was induced for the SOI transistor at high gate DC bias under low supply drain voltages.

Original language	English
Pages	31-32
Number of pages	2
DOIs	https://doi.org/10.1109/SOIC.2001.957970
State	Published - Oct 2001
Event	2001 IEEE International SOI Conference - Durango, CO, United States Duration: 1 Oct 2001 → 4 Oct 2001

Conference

Conference	2001 IEEE International SOI Conference
Country/Territory	United States
City	Durango, CO
Period	1/10/01 → 4/10/01

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10.1109/SOIC.2001.957970

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title = "Self-heating enhanced impact ionization in SOI MOSFETs",

abstract = "A self-heating enhanced impact-ionization phenomenon in SOI MOSFETs was analyzed. The self-heating effect provides carrier heating which determines impact ionization. Co-processed bulk and PD SOI MOSFETs were investigated using 0.13 μm technology. More impact ionization current was induced for the SOI transistor at high gate DC bias under low supply drain voltages.",

author = "Pin Su and K. Goto and T. Sugii and Chen-Ming Hu",

year = "2001",

month = oct,

doi = "10.1109/SOIC.2001.957970",

language = "English",

pages = "31--32",

note = "2001 IEEE International SOI Conference ; Conference date: 01-10-2001 Through 04-10-2001",

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AU - Su, Pin

AU - Goto, K.

AU - Sugii, T.

AU - Hu, Chen-Ming

PY - 2001/10

Y1 - 2001/10

N2 - A self-heating enhanced impact-ionization phenomenon in SOI MOSFETs was analyzed. The self-heating effect provides carrier heating which determines impact ionization. Co-processed bulk and PD SOI MOSFETs were investigated using 0.13 μm technology. More impact ionization current was induced for the SOI transistor at high gate DC bias under low supply drain voltages.

AB - A self-heating enhanced impact-ionization phenomenon in SOI MOSFETs was analyzed. The self-heating effect provides carrier heating which determines impact ionization. Co-processed bulk and PD SOI MOSFETs were investigated using 0.13 μm technology. More impact ionization current was induced for the SOI transistor at high gate DC bias under low supply drain voltages.

UR - http://www.scopus.com/inward/record.url?scp=0035159829&partnerID=8YFLogxK

U2 - 10.1109/SOIC.2001.957970

DO - 10.1109/SOIC.2001.957970

M3 - Paper

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SP - 31

EP - 32

T2 - 2001 IEEE International SOI Conference

Y2 - 1 October 2001 through 4 October 2001

ER -

Self-heating enhanced impact ionization in SOI MOSFETs

Abstract

Conference

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