Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate

Shih Chin Kao; Hsiao-Wen Zan; Jung Jie Huang; Bo Cheng Kung

Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate

Shih Chin Kao^*, Hsiao-Wen Zan, Jung Jie Huang, Bo Cheng Kung

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10^-13 A while the field-effect mobility is 0.42 cm² V ^-1s^-1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.

Original language	English
State	Published - 2009
Event	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan Duration: 27 Apr 2009 → 30 Apr 2009

Conference

Conference	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
Country/Territory	Taiwan
City	Taipei
Period	27/04/09 → 30/04/09

Keywords

A-Si: H TFT
Flexible
Reliability
Self-heating

Cite this

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title = "Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate",

abstract = "a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10-13 A while the field-effect mobility is 0.42 cm2 V -1s-1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.",

keywords = "A-Si: H TFT, Flexible, Reliability, Self-heating",

author = "Kao, {Shih Chin} and Hsiao-Wen Zan and Huang, {Jung Jie} and Kung, {Bo Cheng}",

year = "2009",

language = "English",

note = "2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 ; Conference date: 27-04-2009 Through 30-04-2009",

}

Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate. / Kao, Shih Chin; Zan, Hsiao-Wen; Huang, Jung Jie et al.
2009. Paper presented at 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009, Taipei, Taiwan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Self heating effect on reliability for low-temperature a-Si

T2 - 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009

AU - Kao, Shih Chin

AU - Zan, Hsiao-Wen

AU - Huang, Jung Jie

AU - Kung, Bo Cheng

PY - 2009

Y1 - 2009

N2 - a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10-13 A while the field-effect mobility is 0.42 cm2 V -1s-1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.

AB - a-Si:H TFTs on colorless polyimide substrates were successfully fabricated at low process temperature as 160 °C. The gate leakage current is as low as 10-13 A while the field-effect mobility is 0.42 cm2 V -1s-1 and subthreshold swing is 0.77 V/dec. By using bias-temperature stress, the influence of drain-bias modulated carrier concentration and self-heating on device reliability were investigated.

KW - A-Si: H TFT

KW - Flexible

KW - Reliability

KW - Self-heating

UR - http://www.scopus.com/inward/record.url?scp=79952058837&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79952058837

Y2 - 27 April 2009 through 30 April 2009

ER -

Self heating effect on reliability for low-temperature a-Si: H TFTs on flexible substrate

Abstract

Conference

Keywords

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