Self-heating effect on bias-stressed reliability for low-temperature a-Si:H TFT on flexible substrate

Shih Chin Kao*, Hsiao-Wen Zan, Jung Jie Huang, Bo Cheng Kung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Hydrogenated amorphous silicon thin-film transistors on colorless polyimide substrates were successfully fabricated at a low process temperature (160 °C). The gate leakage current is as low as 1013A, while the field-effect mobility is 0.42 cm2V -1 s-1, and the subthreshold swing is 0.77 V/dec. Using bias-temperature stress on devices with different channel widths, the enhancement of self-heating effect on bias-stressed reliability is investigated for the first time. Elevated temperature due to self-heating effect is estimated either by extending the bias-stressed model or by modifying the thermal equivalent circuit model. Degradation of device reliability on a bent substrate is also significant when self-heating effect is incorporated.

Original languageEnglish
Article number5393049
Pages (from-to)588-593
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number3
DOIs
StatePublished - 1 Mar 2010

Keywords

  • Flexible
  • Hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT)
  • Reliability
  • Self-heating

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