Self-heating characterization for SOI MOSFET based on AC output conductance

Wei Jin; Samuel K.H. Fung; Weidong Liu; Philip C.H. Chan; Chen-Ming Hu

doi:10.1109/IEDM.1999.823873

Self-heating characterization for SOI MOSFET based on AC output conductance

Wei Jin^*, Samuel K.H. Fung, Weidong Liu, Philip C.H. Chan, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

59 Scopus citations

Abstract

A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R _th ) and thermal capacitance (C _th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

Original language	English
Pages (from-to)	175-178
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1999.823873
State	Published - 1 Dec 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999

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title = "Self-heating characterization for SOI MOSFET based on AC output conductance",

abstract = " A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R th ) and thermal capacitance (C th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling. ",

author = "Wei Jin and Fung, {Samuel K.H.} and Weidong Liu and Chan, {Philip C.H.} and Chen-Ming Hu",

year = "1999",

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doi = "10.1109/IEDM.1999.823873",

language = "English",

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journal = "Technical Digest - International Electron Devices Meeting",

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note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

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T1 - Self-heating characterization for SOI MOSFET based on AC output conductance

AU - Jin, Wei

AU - Fung, Samuel K.H.

AU - Liu, Weidong

AU - Chan, Philip C.H.

AU - Hu, Chen-Ming

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R th ) and thermal capacitance (C th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

AB - A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R th ) and thermal capacitance (C th ) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

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U2 - 10.1109/IEDM.1999.823873

DO - 10.1109/IEDM.1999.823873

M3 - Conference article

AN - SCOPUS:0033314624

SN - 0163-1918

SP - 175

EP - 178

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Self-heating characterization for SOI MOSFET based on AC output conductance

Abstract

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