Self-assembled Si/SiO2 superlattice in Si-rich oxide films

Chu Yun Hsiao; Chuan Feng Shih; Kuan Wei Su; Hui Ju Chen; Sheng Wen Fu

doi:10.1063/1.3624706

Self-assembled Si/SiO₂ superlattice in Si-rich oxide films

Chu Yun Hsiao, Chuan Feng Shih^*, Kuan Wei Su, Hui Ju Chen, Sheng Wen Fu

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

This work involves as-prepared SiO_x (x 2) films that were deposited by reactive sputtering. The regular Si/SiO₂ superlattices were self-assembled without post-annealing. The periodicity of Si/SiO ₂ superlattices was modulated by varying the oxygen flow rate and was associated with x in SiO_x in the range 2-1.3. Si/SiO₂ superlattices were formed under compressive stress and the factors that governed the periodicity were discussed.

Original language	English
Article number	053115
Journal	Applied Physics Letters
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.3624706
State	Published - 1 Aug 2011

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10.1063/1.3624706

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title = "Self-assembled Si/SiO2 superlattice in Si-rich oxide films",

abstract = "This work involves as-prepared SiOx (x 2) films that were deposited by reactive sputtering. The regular Si/SiO2 superlattices were self-assembled without post-annealing. The periodicity of Si/SiO 2 superlattices was modulated by varying the oxygen flow rate and was associated with x in SiOx in the range 2-1.3. Si/SiO2 superlattices were formed under compressive stress and the factors that governed the periodicity were discussed.",

author = "Hsiao, {Chu Yun} and Shih, {Chuan Feng} and Su, {Kuan Wei} and Chen, {Hui Ju} and Fu, {Sheng Wen}",

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AU - Hsiao, Chu Yun

AU - Shih, Chuan Feng

AU - Su, Kuan Wei

AU - Chen, Hui Ju

AU - Fu, Sheng Wen

PY - 2011/8/1

Y1 - 2011/8/1

N2 - This work involves as-prepared SiOx (x 2) films that were deposited by reactive sputtering. The regular Si/SiO2 superlattices were self-assembled without post-annealing. The periodicity of Si/SiO 2 superlattices was modulated by varying the oxygen flow rate and was associated with x in SiOx in the range 2-1.3. Si/SiO2 superlattices were formed under compressive stress and the factors that governed the periodicity were discussed.

AB - This work involves as-prepared SiOx (x 2) films that were deposited by reactive sputtering. The regular Si/SiO2 superlattices were self-assembled without post-annealing. The periodicity of Si/SiO 2 superlattices was modulated by varying the oxygen flow rate and was associated with x in SiOx in the range 2-1.3. Si/SiO2 superlattices were formed under compressive stress and the factors that governed the periodicity were discussed.

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Self-assembled Si/SiO₂ superlattice in Si-rich oxide films

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