Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

Y. K. Fu; Cheng-Huang Kuo; C. J. Tun; C. W. Kuo; W. C. Lai; G. C. Chi; C. J. Pan; M. C. Chen; H. F. Hong; S. M. Lan

doi:10.1016/j.jcrysgro.2008.07.067

Self-assembled InN dots grown on GaN with an In_0.08Ga_0.92N intermediate layer by metal organic chemical vapor deposition

Y. K. Fu, Cheng-Huang Kuo^*, C. J. Tun, C. W. Kuo, W. C. Lai, G. C. Chi, C. J. Pan, M. C. Chen, H. F. Hong, S. M. Lan

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In_0.08Ga_0.92N intermediate layer were demonstrated. Inserting an In_0.08Ga_0.92N layer between InN and GaN reduced the average size of InN dots, increased the density of InN dots, and prevented the formation of polycrystalline InN or metallic indium. Furthermore, blue shift of the photoluminescence spectrum of InN dots can be identified when inserting an In_0.08Ga_0.92N intermediate layer, likely because the InN dots with an In_0.08Ga_0.92N intermediate layer are markedly smaller than InN dots without an In_0.08Ga_0.92N intermediate layer, indicating the size quantization effect in the dots. Crown

Original language	English
Pages (from-to)	4456-4459
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	20
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.07.067
State	Published - 1 Oct 2008

Keywords

A1. Photoluminescence
A3. Metal-organic vapor phase epitaxy
B1. InGaN buffer layer
B1. Indium nitride
B2. Semiconducting III-V materials

Access to Document

10.1016/j.jcrysgro.2008.07.067

Cite this

@article{38a8649a01754a4a9772a7a5ed57e084,

title = "Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition",

abstract = "Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In0.08Ga0.92N intermediate layer were demonstrated. Inserting an In0.08Ga0.92N layer between InN and GaN reduced the average size of InN dots, increased the density of InN dots, and prevented the formation of polycrystalline InN or metallic indium. Furthermore, blue shift of the photoluminescence spectrum of InN dots can be identified when inserting an In0.08Ga0.92N intermediate layer, likely because the InN dots with an In0.08Ga0.92N intermediate layer are markedly smaller than InN dots without an In0.08Ga0.92N intermediate layer, indicating the size quantization effect in the dots. Crown",

keywords = "A1. Photoluminescence, A3. Metal-organic vapor phase epitaxy, B1. InGaN buffer layer, B1. Indium nitride, B2. Semiconducting III-V materials",

author = "Fu, {Y. K.} and Cheng-Huang Kuo and Tun, {C. J.} and Kuo, {C. W.} and Lai, {W. C.} and Chi, {G. C.} and Pan, {C. J.} and Chen, {M. C.} and Hong, {H. F.} and Lan, {S. M.}",

year = "2008",

month = oct,

day = "1",

doi = "10.1016/j.jcrysgro.2008.07.067",

language = "English",

volume = "310",

pages = "4456--4459",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "20",

}

TY - JOUR

T1 - Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

AU - Fu, Y. K.

AU - Kuo, Cheng-Huang

AU - Tun, C. J.

AU - Kuo, C. W.

AU - Lai, W. C.

AU - Chi, G. C.

AU - Pan, C. J.

AU - Chen, M. C.

AU - Hong, H. F.

AU - Lan, S. M.

PY - 2008/10/1

Y1 - 2008/10/1

N2 - Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In0.08Ga0.92N intermediate layer were demonstrated. Inserting an In0.08Ga0.92N layer between InN and GaN reduced the average size of InN dots, increased the density of InN dots, and prevented the formation of polycrystalline InN or metallic indium. Furthermore, blue shift of the photoluminescence spectrum of InN dots can be identified when inserting an In0.08Ga0.92N intermediate layer, likely because the InN dots with an In0.08Ga0.92N intermediate layer are markedly smaller than InN dots without an In0.08Ga0.92N intermediate layer, indicating the size quantization effect in the dots. Crown

AB - Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In0.08Ga0.92N intermediate layer were demonstrated. Inserting an In0.08Ga0.92N layer between InN and GaN reduced the average size of InN dots, increased the density of InN dots, and prevented the formation of polycrystalline InN or metallic indium. Furthermore, blue shift of the photoluminescence spectrum of InN dots can be identified when inserting an In0.08Ga0.92N intermediate layer, likely because the InN dots with an In0.08Ga0.92N intermediate layer are markedly smaller than InN dots without an In0.08Ga0.92N intermediate layer, indicating the size quantization effect in the dots. Crown

KW - A1. Photoluminescence

KW - A3. Metal-organic vapor phase epitaxy

KW - B1. InGaN buffer layer

KW - B1. Indium nitride

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=52149109925&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.07.067

DO - 10.1016/j.jcrysgro.2008.07.067

M3 - Article

AN - SCOPUS:52149109925

SN - 0022-0248

VL - 310

SP - 4456

EP - 4459

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 20

ER -

Self-assembled InN dots grown on GaN with an In_0.08Ga_0.92N intermediate layer by metal organic chemical vapor deposition

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this