Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

Xingui Zhang; Huaxin Guo; Hau Yu Lin; Chao Ching Cheng; Chih Hsin Ko; Clement H. Wann; Guang Li Luo; Chun-Yen Chang; Chao-Hsin Chien; Zong You Han; Shih Chiang Huang; Hock Chun Chin; Xiao Gong; Shao Ming Koh; Phyllis Shi Ya Lim; Yee Chia Yeo

doi:10.1116/1.3592211

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

Xingui Zhang^*, Huaxin Guo, Hau Yu Lin, Chao Ching Cheng, Chih Hsin Ko, Clement H. Wann, Guang Li Luo, Chun-Yen Chang, Chao-Hsin Chien, Zong You Han, Shih Chiang Huang, Hock Chun Chin, Xiao Gong, Shao Ming Koh, Phyllis Shi Ya Lim, Yee Chia Yeo

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n+ doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (ρ _e) of 1.57 mm and sheet resistance (Rsh) of 2.8/ was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs.

Original language	English
Article number	032209
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	29
Issue number	3
DOIs	https://doi.org/10.1116/1.3592211
State	Published - 1 Jan 2011

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Zhang, X., Guo, H., Lin, H. Y., Cheng, C. C., Ko, C. H., Wann, C. H., Luo, G. L., Chang, C-Y., Chien, C-H., Han, Z. Y., Huang, S. C., Chin, H. C., Gong, X., Koh, S. M., Lim, P. S. Y., & Yeo, Y. C. (2011). Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 29(3), [032209]. https://doi.org/10.1116/1.3592211

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abstract = "The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n+ doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (ρ e) of 1.57 mm and sheet resistance (Rsh) of 2.8/ was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs.",

author = "Xingui Zhang and Huaxin Guo and Lin, {Hau Yu} and Cheng, {Chao Ching} and Ko, {Chih Hsin} and Wann, {Clement H.} and Luo, {Guang Li} and Chun-Yen Chang and Chao-Hsin Chien and Han, {Zong You} and Huang, {Shih Chiang} and Chin, {Hock Chun} and Xiao Gong and Koh, {Shao Ming} and Lim, {Phyllis Shi Ya} and Yeo, {Yee Chia}",

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Zhang, X, Guo, H, Lin, HY, Cheng, CC, Ko, CH, Wann, CH, Luo, GL, Chang, C-Y, Chien, C-H, Han, ZY, Huang, SC, Chin, HC, Gong, X, Koh, SM, Lim, PSY & Yeo, YC 2011, 'Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 29, no. 3, 032209. https://doi.org/10.1116/1.3592211

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T1 - Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

AU - Zhang, Xingui

AU - Guo, Huaxin

AU - Lin, Hau Yu

AU - Cheng, Chao Ching

AU - Ko, Chih Hsin

AU - Wann, Clement H.

AU - Luo, Guang Li

AU - Chang, Chun-Yen

AU - Chien, Chao-Hsin

AU - Han, Zong You

AU - Huang, Shih Chiang

AU - Chin, Hock Chun

AU - Gong, Xiao

AU - Koh, Shao Ming

AU - Lim, Phyllis Shi Ya

AU - Yeo, Yee Chia

PY - 2011/1/1

Y1 - 2011/1/1

N2 - The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n+ doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (ρ e) of 1.57 mm and sheet resistance (Rsh) of 2.8/ was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs.

AB - The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n+ doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (ρ e) of 1.57 mm and sheet resistance (Rsh) of 2.8/ was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs.

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JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

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Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

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