Abstract
Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due to the small electronic band gap (EG) ≤ 0.6 eV and effective mass. This work investigates the on-current and off-current tradeoff for two populations of semiconducting-enriched CNT with DCNT ≈ 1.0 nm displaying a simultaneous 50x improvement in minimun current (IMIN) with 2.5x degradation in contact resistance compared to DCNT ≈ 1.4 nm using a Pd side-bonded contact. A method to enhance the performance of low-leakage CNFETs is demonstrated using sub-monolayer self-aligned contact doping with 0.8 nm of MoOX, which delivers a 57% reduction in contact resistance to DCNT ≈ 1.0 nm. Robustness is verified after annealing at 200 °C for 30 min and monitoring stability across 6 months post-fabrication with no change in electrical behaviors.
Original language | English |
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Article number | 2300519 |
Journal | Advanced Electronic Materials |
Volume | 10 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2024 |
Keywords
- MoO
- carbon nanotube
- contact resistance
- doping, leakage
- low-dimensional materials