Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors

Hsin Yuan Chiu, Tzu Ang Chao, Nathaniel S. Safron, Sheng Kai Su, San Lin Liew, Wei Sheng Yun, Po Sen Mao, Yu Tung Lin, Vincent Duen Huei Hou, Tung Ying Lee, Wen Hao Chang, Matthias Passlack, Hon Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner*, Chao Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due to the small electronic band gap (EG) ≤ 0.6 eV and effective mass. This work investigates the on-current and off-current tradeoff for two populations of semiconducting-enriched CNT with DCNT ≈ 1.0 nm displaying a simultaneous 50x improvement in minimun current (IMIN) with 2.5x degradation in contact resistance compared to DCNT ≈ 1.4 nm using a Pd side-bonded contact. A method to enhance the performance of low-leakage CNFETs is demonstrated using sub-monolayer self-aligned contact doping with 0.8 nm of MoOX, which delivers a 57% reduction in contact resistance to DCNT ≈ 1.0 nm. Robustness is verified after annealing at 200 °C for 30 min and monitoring stability across 6 months post-fabrication with no change in electrical behaviors.

Original languageEnglish
Article number2300519
JournalAdvanced Electronic Materials
Volume10
Issue number3
DOIs
StatePublished - Mar 2024

Keywords

  • MoO
  • carbon nanotube
  • contact resistance
  • doping, leakage
  • low-dimensional materials

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