A self-aligned double-poly bipolar transistor with a low-temperature epitaxial base is presented. Selective epitaxy emitter window technology (SEEW) is used to demonstrate the leverage of an epitaxial base technology by achieving 60-nm basewidth, an 7.5-kΩ/sq. intrinsic base sheet resistance, a peak current gain up to 115, and a C-B breakdown voltage of 7.5 V. Despite the low intrinsic base sheet resistance, a peak transit frequency of 30 GHz has been calculated for the transistor. Further, the advantages of SEEW technology for submicron emitters and very thin base formation are explained.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - Dec 1989|
|Event||1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA|
Duration: 3 Dec 1989 → 6 Dec 1989