Selective growth of single InAs quantum dots using strain engineering

B. C. Lee; Sheng-Di Lin; C. P. Lee; H. M. Lee; J. C. Wu; Kien-Wen Sun

doi:10.1063/1.1433169

Selective growth of single InAs quantum dots using strain engineering

B. C. Lee, Sheng-Di Lin, C. P. Lee, H. M. Lee, J. C. Wu, Kien-Wen Sun

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved.

Original language	English
Pages (from-to)	326-328
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	2
DOIs	https://doi.org/10.1063/1.1433169
State	Published - 14 Jan 2002

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@article{372b46c4d94549c79e1cbbdafd2d5107,

title = "Selective growth of single InAs quantum dots using strain engineering",

abstract = "A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved.",

author = "Lee, {B. C.} and Sheng-Di Lin and Lee, {C. P.} and Lee, {H. M.} and Wu, {J. C.} and Kien-Wen Sun",

year = "2002",

month = jan,

day = "14",

doi = "10.1063/1.1433169",

language = "English",

volume = "80",

pages = "326--328",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Selective growth of single InAs quantum dots using strain engineering

AU - Lee, B. C.

AU - Lin, Sheng-Di

AU - Lee, C. P.

AU - Lee, H. M.

AU - Wu, J. C.

AU - Sun, Kien-Wen

PY - 2002/1/14

Y1 - 2002/1/14

N2 - A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved.

AB - A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved.

UR - http://www.scopus.com/inward/record.url?scp=79956056819&partnerID=8YFLogxK

U2 - 10.1063/1.1433169

DO - 10.1063/1.1433169

M3 - Article

AN - SCOPUS:79956056819

SN - 0003-6951

VL - 80

SP - 326

EP - 328

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Selective growth of single InAs quantum dots using strain engineering

Abstract

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