Selective Growth of Carbon Nanotubes on Prepatterned Amorphous Silicon Thin Films by Electroless Plating Ni

C. W. Chao; Yew-Chuhg Wu; Gau Ren Hu; Ming Shian Feng

doi:10.1149/1.1596953

Selective Growth of Carbon Nanotubes on Prepatterned Amorphous Silicon Thin Films by Electroless Plating Ni

C. W. Chao^*, Yew-Chuhg Wu, Gau Ren Hu, Ming Shian Feng

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Selective growth of carbon nanotubes (CNTs) synthesized at low temperature by electroless plating Ni was proposed for the first time in this study. After electroless plating, Ni nanoparticles were selectively deposited on the prepatterned amorphous silicon (a-Si) thin films. After plasma-enhanced chemical vapor deposition, well-aligned CNTs were observed only on the Ni-coated a-Si islands. The diameter, density, and the field emission of CNTs could be controlled easily by the Ni plating time. The achievement of controlling the site density and growth area is significant for applications of carbon nanotubes as field emission devices, nanoelectrode arrays, etc.

Original language	English
Journal	Journal of the Electrochemical Society
Volume	150
Issue number	9
DOIs	https://doi.org/10.1149/1.1596953
State	Published - 1 Sep 2003

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@article{db4b0cf32e3e441883cbf7a621cadf8b,

title = "Selective Growth of Carbon Nanotubes on Prepatterned Amorphous Silicon Thin Films by Electroless Plating Ni",

abstract = "Selective growth of carbon nanotubes (CNTs) synthesized at low temperature by electroless plating Ni was proposed for the first time in this study. After electroless plating, Ni nanoparticles were selectively deposited on the prepatterned amorphous silicon (a-Si) thin films. After plasma-enhanced chemical vapor deposition, well-aligned CNTs were observed only on the Ni-coated a-Si islands. The diameter, density, and the field emission of CNTs could be controlled easily by the Ni plating time. The achievement of controlling the site density and growth area is significant for applications of carbon nanotubes as field emission devices, nanoelectrode arrays, etc.",

author = "Chao, {C. W.} and Yew-Chuhg Wu and Hu, {Gau Ren} and Feng, {Ming Shian}",

year = "2003",

month = sep,

day = "1",

doi = "10.1149/1.1596953",

language = "English",

volume = "150",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "9",

}

TY - JOUR

T1 - Selective Growth of Carbon Nanotubes on Prepatterned Amorphous Silicon Thin Films by Electroless Plating Ni

AU - Chao, C. W.

AU - Wu, Yew-Chuhg

AU - Hu, Gau Ren

AU - Feng, Ming Shian

PY - 2003/9/1

Y1 - 2003/9/1

N2 - Selective growth of carbon nanotubes (CNTs) synthesized at low temperature by electroless plating Ni was proposed for the first time in this study. After electroless plating, Ni nanoparticles were selectively deposited on the prepatterned amorphous silicon (a-Si) thin films. After plasma-enhanced chemical vapor deposition, well-aligned CNTs were observed only on the Ni-coated a-Si islands. The diameter, density, and the field emission of CNTs could be controlled easily by the Ni plating time. The achievement of controlling the site density and growth area is significant for applications of carbon nanotubes as field emission devices, nanoelectrode arrays, etc.

AB - Selective growth of carbon nanotubes (CNTs) synthesized at low temperature by electroless plating Ni was proposed for the first time in this study. After electroless plating, Ni nanoparticles were selectively deposited on the prepatterned amorphous silicon (a-Si) thin films. After plasma-enhanced chemical vapor deposition, well-aligned CNTs were observed only on the Ni-coated a-Si islands. The diameter, density, and the field emission of CNTs could be controlled easily by the Ni plating time. The achievement of controlling the site density and growth area is significant for applications of carbon nanotubes as field emission devices, nanoelectrode arrays, etc.

UR - http://www.scopus.com/inward/record.url?scp=0042782045&partnerID=8YFLogxK

U2 - 10.1149/1.1596953

DO - 10.1149/1.1596953

M3 - Article

AN - SCOPUS:0042782045

SN - 0013-4651

VL - 150

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 9

ER -

Selective Growth of Carbon Nanotubes on Prepatterned Amorphous Silicon Thin Films by Electroless Plating Ni

Abstract

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