Selective Deposition of PdO Nanoparticles on Si Nanodevices for Hydrogen Sensing

Yu Sheng Lin; Cheng Yen Wu; Fu Ming Pan; Jeng Tzong Sheu

doi:10.1021/acsanm.3c01289

Selective Deposition of PdO Nanoparticles on Si Nanodevices for Hydrogen Sensing

Yu Sheng Lin, Cheng Yen Wu, Fu Ming Pan, Jeng Tzong Sheu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, we present a method, involving plasma-enhanced atomic layer deposition and constant-power device-localized Joule heating (DLJH), for the selective deposition of palladium oxide (PdO) nanoparticles at the n^- region of n⁺/n^-/n⁺ polysilicon nanobelt (PNB) devices. These PdO-decorated PNB devices were then operated under DLJH so that the temperature of the n^- region was maintained during the sensing of H₂ gas. From their measured responses, the devices operated at a temperature of 339 K exhibited the most reactive interactions between PdO and H₂. Considering the possibility of humidity interference, we also characterized the PdO-decorated PNB devices for H₂ sensing at various relative humidities. The PdO nanoparticles on the PNB devices having a grain distance that sustained a spillover effect were almost immune to RH interference.

Original language	English
Pages (from-to)	10365-10374
Number of pages	10
Journal	ACS Applied Nano Materials
Volume	6
Issue number	12
DOIs	https://doi.org/10.1021/acsanm.3c01289
State	Published - 23 Jun 2023

Keywords

device-localized Joule heating
hydrogen sensing
palladium oxide
plasma-enhanced atomic layer deposition
polysilicon nanobelt
relative humidity
selective deposition

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10.1021/acsanm.3c01289

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@article{71802966f7134a169d2cd398fcdcfa88,

title = "Selective Deposition of PdO Nanoparticles on Si Nanodevices for Hydrogen Sensing",

abstract = "In this paper, we present a method, involving plasma-enhanced atomic layer deposition and constant-power device-localized Joule heating (DLJH), for the selective deposition of palladium oxide (PdO) nanoparticles at the n- region of n+/n-/n+ polysilicon nanobelt (PNB) devices. These PdO-decorated PNB devices were then operated under DLJH so that the temperature of the n- region was maintained during the sensing of H2 gas. From their measured responses, the devices operated at a temperature of 339 K exhibited the most reactive interactions between PdO and H2. Considering the possibility of humidity interference, we also characterized the PdO-decorated PNB devices for H2 sensing at various relative humidities. The PdO nanoparticles on the PNB devices having a grain distance that sustained a spillover effect were almost immune to RH interference.",

keywords = "device-localized Joule heating, hydrogen sensing, palladium oxide, plasma-enhanced atomic layer deposition, polysilicon nanobelt, relative humidity, selective deposition",

author = "Lin, {Yu Sheng} and Wu, {Cheng Yen} and Pan, {Fu Ming} and Sheu, {Jeng Tzong}",

note = "Publisher Copyright: {\textcopyright} 2023 American Chemical Society.",

year = "2023",

month = jun,

day = "23",

doi = "10.1021/acsanm.3c01289",

language = "English",

volume = "6",

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journal = "ACS Applied Nano Materials",

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TY - JOUR

T1 - Selective Deposition of PdO Nanoparticles on Si Nanodevices for Hydrogen Sensing

AU - Lin, Yu Sheng

AU - Wu, Cheng Yen

AU - Pan, Fu Ming

AU - Sheu, Jeng Tzong

PY - 2023/6/23

Y1 - 2023/6/23

N2 - In this paper, we present a method, involving plasma-enhanced atomic layer deposition and constant-power device-localized Joule heating (DLJH), for the selective deposition of palladium oxide (PdO) nanoparticles at the n- region of n+/n-/n+ polysilicon nanobelt (PNB) devices. These PdO-decorated PNB devices were then operated under DLJH so that the temperature of the n- region was maintained during the sensing of H2 gas. From their measured responses, the devices operated at a temperature of 339 K exhibited the most reactive interactions between PdO and H2. Considering the possibility of humidity interference, we also characterized the PdO-decorated PNB devices for H2 sensing at various relative humidities. The PdO nanoparticles on the PNB devices having a grain distance that sustained a spillover effect were almost immune to RH interference.

AB - In this paper, we present a method, involving plasma-enhanced atomic layer deposition and constant-power device-localized Joule heating (DLJH), for the selective deposition of palladium oxide (PdO) nanoparticles at the n- region of n+/n-/n+ polysilicon nanobelt (PNB) devices. These PdO-decorated PNB devices were then operated under DLJH so that the temperature of the n- region was maintained during the sensing of H2 gas. From their measured responses, the devices operated at a temperature of 339 K exhibited the most reactive interactions between PdO and H2. Considering the possibility of humidity interference, we also characterized the PdO-decorated PNB devices for H2 sensing at various relative humidities. The PdO nanoparticles on the PNB devices having a grain distance that sustained a spillover effect were almost immune to RH interference.

KW - device-localized Joule heating

KW - hydrogen sensing

KW - palladium oxide

KW - plasma-enhanced atomic layer deposition

KW - polysilicon nanobelt

KW - relative humidity

KW - selective deposition

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U2 - 10.1021/acsanm.3c01289

DO - 10.1021/acsanm.3c01289

M3 - Article

AN - SCOPUS:85163392526

SN - 2574-0970

VL - 6

SP - 10365

EP - 10374

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 12

ER -

Selective Deposition of PdO Nanoparticles on Si Nanodevices for Hydrogen Sensing

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