Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD

Deepak Anandan; Edward Yi Chang; Hung-Wei Yu; Hua Lun Ko; Venkatesan Nagarajan; Sankalp Kumar Singh

doi:10.1109/VLSI-TSA51926.2021.9440134

Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD

Deepak Anandan, Edward Yi Chang^*, Hung-Wei Yu, Hua Lun Ko, Venkatesan Nagarajan, Sankalp Kumar Singh

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Integration of InGaAs/InAs nanowire on silicon (Si) substrate has been attracting huge attention for opto- and micro-electronics applications. In this work we report selective area epitaxy (SAE) of InGaAs/InAs heterostructure (HS) on Si (111) using metal organic chemical vapor deposition (MOCVD). High quality InAs wurtzite (WZ) segment is grown axially on InGaAs NW when the arsine (AsH3) supply is low. The growth phenomenon behind the axial InAs HS on InGaAs is attributed due to surface segregation and sidewall diffusion of indium (In) adatoms on the surface of the InGaAs nanowire at In-rich/arsenic (As)-limited region. For high AsH3 flow, As coverage impedes InAs segment formation.

Original language	English
Title of host publication	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665419345
DOIs	https://doi.org/10.1109/VLSI-TSA51926.2021.9440134
State	Published - 19 Apr 2021
Event	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan Duration: 19 Apr 2021 → 22 Apr 2021

Publication series

Name	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Country/Territory	Taiwan
City	Hsinchu
Period	19/04/21 → 22/04/21

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10.1109/VLSI-TSA51926.2021.9440134

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Anandan, D., Chang, E. Y., Yu, H.-W., Ko, H. L., Nagarajan, V., & Singh, S. K. (2021). Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings Article 9440134 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA51926.2021.9440134

Anandan, Deepak ; Chang, Edward Yi ; Yu, Hung-Wei et al. / Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD. VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

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title = "Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD",

abstract = "Integration of InGaAs/InAs nanowire on silicon (Si) substrate has been attracting huge attention for opto- and micro-electronics applications. In this work we report selective area epitaxy (SAE) of InGaAs/InAs heterostructure (HS) on Si (111) using metal organic chemical vapor deposition (MOCVD). High quality InAs wurtzite (WZ) segment is grown axially on InGaAs NW when the arsine (AsH3) supply is low. The growth phenomenon behind the axial InAs HS on InGaAs is attributed due to surface segregation and sidewall diffusion of indium (In) adatoms on the surface of the InGaAs nanowire at In-rich/arsenic (As)-limited region. For high AsH3 flow, As coverage impedes InAs segment formation. ",

author = "Deepak Anandan and Chang, {Edward Yi} and Hung-Wei Yu and Ko, {Hua Lun} and Venkatesan Nagarajan and Singh, {Sankalp Kumar}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 ; Conference date: 19-04-2021 Through 22-04-2021",

year = "2021",

month = apr,

day = "19",

doi = "10.1109/VLSI-TSA51926.2021.9440134",

language = "English",

series = "VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings",

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Anandan, D, Chang, EY , Yu, H-W, Ko, HL, Nagarajan, V & Singh, SK 2021, Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD. in VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings., 9440134, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021, Hsinchu, Taiwan, 19/04/21. https://doi.org/10.1109/VLSI-TSA51926.2021.9440134

Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD. / Anandan, Deepak; Chang, Edward Yi ; Yu, Hung-Wei et al.
VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. 9440134 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD

AU - Anandan, Deepak

AU - Chang, Edward Yi

AU - Yu, Hung-Wei

AU - Ko, Hua Lun

AU - Nagarajan, Venkatesan

AU - Singh, Sankalp Kumar

PY - 2021/4/19

Y1 - 2021/4/19

N2 - Integration of InGaAs/InAs nanowire on silicon (Si) substrate has been attracting huge attention for opto- and micro-electronics applications. In this work we report selective area epitaxy (SAE) of InGaAs/InAs heterostructure (HS) on Si (111) using metal organic chemical vapor deposition (MOCVD). High quality InAs wurtzite (WZ) segment is grown axially on InGaAs NW when the arsine (AsH3) supply is low. The growth phenomenon behind the axial InAs HS on InGaAs is attributed due to surface segregation and sidewall diffusion of indium (In) adatoms on the surface of the InGaAs nanowire at In-rich/arsenic (As)-limited region. For high AsH3 flow, As coverage impedes InAs segment formation.

AB - Integration of InGaAs/InAs nanowire on silicon (Si) substrate has been attracting huge attention for opto- and micro-electronics applications. In this work we report selective area epitaxy (SAE) of InGaAs/InAs heterostructure (HS) on Si (111) using metal organic chemical vapor deposition (MOCVD). High quality InAs wurtzite (WZ) segment is grown axially on InGaAs NW when the arsine (AsH3) supply is low. The growth phenomenon behind the axial InAs HS on InGaAs is attributed due to surface segregation and sidewall diffusion of indium (In) adatoms on the surface of the InGaAs nanowire at In-rich/arsenic (As)-limited region. For high AsH3 flow, As coverage impedes InAs segment formation.

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M3 - Conference contribution

AN - SCOPUS:85108171688

T3 - VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

BT - VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021

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ER -

Anandan D, Chang EY , Yu HW, Ko HL, Nagarajan V, Singh SK. Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. 9440134. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). doi: 10.1109/VLSI-TSA51926.2021.9440134

Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD

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