Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films

F. Y. Hsu; C. C. Leu; Chao-Hsin Chien; C. T. Hu

doi:10.1109/ISAF.2007.4393187

Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films

F. Y. Hsu, C. C. Leu, Chao-Hsin Chien, C. T. Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi ₂ Ta _2x O ₉ (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi ₂ Ta ₂ O ₉ ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi ₂ Ta ₂ O ₉ thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi ₂ Ta _{1 8} O ₉ buffered SrBi ₂ Ta ₂ O ₉ thin film, with maximum 2Pr values about 19.7 μ C/cm ² , which was almost 93% greater than that of specimen with the stoichiometric buffered one.

Original language	English
Title of host publication	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages	117-118
Number of pages	2
DOIs	https://doi.org/10.1109/ISAF.2007.4393187
State	Published - 1 Dec 2007
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: 27 May 2007 → 31 May 2007

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics

Conference

Conference	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/Territory	Japan
City	Nara-city
Period	27/05/07 → 31/05/07

Access to Document

10.1109/ISAF.2007.4393187

Cite this

Hsu, F. Y., Leu, C. C., Chien, C-H., & Hu, C. T. (2007). Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 117-118). [4393187] (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393187

@inproceedings{245f051f4da2428e8d4f1fe048d933fd,

title = "Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films",

abstract = " The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi 2 Ta 2x O 9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi 2 Ta 2 O 9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi 2 Ta 2 O 9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2 Ta 1 8 O 9 buffered SrBi 2 Ta 2 O 9 thin film, with maximum 2Pr values about 19.7 μ C/cm 2 , which was almost 93% greater than that of specimen with the stoichiometric buffered one. ",

author = "Hsu, {F. Y.} and Leu, {C. C.} and Chao-Hsin Chien and Hu, {C. T.}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ISAF.2007.4393187",

language = "English",

isbn = "1424413338",

series = "IEEE International Symposium on Applications of Ferroelectrics",

pages = "117--118",

booktitle = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF",

note = "null ; Conference date: 27-05-2007 Through 31-05-2007",

}

Hsu, FY, Leu, CC, Chien, C-H & Hu, CT 2007, Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393187, IEEE International Symposium on Applications of Ferroelectrics, pp. 117-118, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 27/05/07. https://doi.org/10.1109/ISAF.2007.4393187

Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. / Hsu, F. Y.; Leu, C. C.; Chien, Chao-Hsin et al.

2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 117-118 4393187 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films

AU - Hsu, F. Y.

AU - Leu, C. C.

AU - Chien, Chao-Hsin

AU - Hu, C. T.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi 2 Ta 2x O 9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi 2 Ta 2 O 9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi 2 Ta 2 O 9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2 Ta 1 8 O 9 buffered SrBi 2 Ta 2 O 9 thin film, with maximum 2Pr values about 19.7 μ C/cm 2 , which was almost 93% greater than that of specimen with the stoichiometric buffered one.

AB - The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi 2 Ta 2x O 9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi 2 Ta 2 O 9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi 2 Ta 2 O 9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2 Ta 1 8 O 9 buffered SrBi 2 Ta 2 O 9 thin film, with maximum 2Pr values about 19.7 μ C/cm 2 , which was almost 93% greater than that of specimen with the stoichiometric buffered one.

UR - http://www.scopus.com/inward/record.url?scp=51349141437&partnerID=8YFLogxK

U2 - 10.1109/ISAF.2007.4393187

DO - 10.1109/ISAF.2007.4393187

M3 - Conference contribution

AN - SCOPUS:51349141437

SN - 1424413338

SN - 9781424413331

T3 - IEEE International Symposium on Applications of Ferroelectrics

SP - 117

EP - 118

BT - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF

Y2 - 27 May 2007 through 31 May 2007

ER -

Hsu FY, Leu CC, Chien C-H, Hu CT. Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 117-118. 4393187. (IEEE International Symposium on Applications of Ferroelectrics). doi: 10.1109/ISAF.2007.4393187