TY - GEN
T1 - Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films
AU - Hsu, F. Y.
AU - Leu, C. C.
AU - Chien, Chao-Hsin
AU - Hu, C. T.
PY - 2007/12/1
Y1 - 2007/12/1
N2 -
The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi
2
Ta
2x
O
9
(SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi
2
Ta
2
O
9
ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi
2
Ta
2
O
9
thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi
2
Ta
1 8
O
9
buffered SrBi
2
Ta
2
O
9
thin film, with maximum 2Pr values about 19.7 μ C/cm
2
, which was almost 93% greater than that of specimen with the stoichiometric buffered one.
AB -
The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi
2
Ta
2x
O
9
(SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi
2
Ta
2
O
9
ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi
2
Ta
2
O
9
thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi
2
Ta
1 8
O
9
buffered SrBi
2
Ta
2
O
9
thin film, with maximum 2Pr values about 19.7 μ C/cm
2
, which was almost 93% greater than that of specimen with the stoichiometric buffered one.
UR - http://www.scopus.com/inward/record.url?scp=51349141437&partnerID=8YFLogxK
U2 - 10.1109/ISAF.2007.4393187
DO - 10.1109/ISAF.2007.4393187
M3 - Conference contribution
AN - SCOPUS:51349141437
SN - 1424413338
SN - 9781424413331
T3 - IEEE International Symposium on Applications of Ferroelectrics
SP - 117
EP - 118
BT - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Y2 - 27 May 2007 through 31 May 2007
ER -