Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films

F. Y. Hsu; C. C. Leu; Chao-Hsin Chien; C. T. Hu

doi:10.1109/ISAF.2007.4393187

Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films

F. Y. Hsu, C. C. Leu, Chao-Hsin Chien, C. T. Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi₂Ta_2xO₉ (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi₂Ta₂O₉ ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi₂Ta₂O₉ thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi ₂Ta_{1 8}O₉ buffered SrBi₂Ta ₂O₉ thin film, with maximum 2Pr values about 19.7 μ C/cm², which was almost 93% greater than that of specimen with the stoichiometric buffered one.

Original language	English
Title of host publication	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages	117-118
Number of pages	2
DOIs	https://doi.org/10.1109/ISAF.2007.4393187
State	Published - 2007
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: 27 May 2007 → 31 May 2007

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics

Conference

Conference	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/Territory	Japan
City	Nara-city
Period	27/05/07 → 31/05/07

Access to Document

10.1109/ISAF.2007.4393187

Cite this

Hsu, F. Y., Leu, C. C., Chien, C.-H., & Hu, C. T. (2007). Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 117-118). Article 4393187 (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393187

@inproceedings{245f051f4da2428e8d4f1fe048d933fd,

title = "Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films",

abstract = "The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi2Ta2xO9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi2Ta2O9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi2Ta2O9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2Ta1 8O9 buffered SrBi2Ta 2O9 thin film, with maximum 2Pr values about 19.7 μ C/cm2, which was almost 93% greater than that of specimen with the stoichiometric buffered one.",

author = "Hsu, {F. Y.} and Leu, {C. C.} and Chao-Hsin Chien and Hu, {C. T.}",

year = "2007",

doi = "10.1109/ISAF.2007.4393187",

language = "English",

isbn = "1424413338",

series = "IEEE International Symposium on Applications of Ferroelectrics",

pages = "117--118",

booktitle = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF",

note = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF ; Conference date: 27-05-2007 Through 31-05-2007",

}

Hsu, FY, Leu, CC, Chien, C-H & Hu, CT 2007, Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393187, IEEE International Symposium on Applications of Ferroelectrics, pp. 117-118, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 27/05/07. https://doi.org/10.1109/ISAF.2007.4393187

Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. / Hsu, F. Y.; Leu, C. C.; Chien, Chao-Hsin et al.
2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 117-118 4393187 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hu, C. T.

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N2 - The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi2Ta2xO9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi2Ta2O9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi2Ta2O9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2Ta1 8O9 buffered SrBi2Ta 2O9 thin film, with maximum 2Pr values about 19.7 μ C/cm2, which was almost 93% greater than that of specimen with the stoichiometric buffered one.

AB - The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi2Ta2xO9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi2Ta2O9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi2Ta2O9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2Ta1 8O9 buffered SrBi2Ta 2O9 thin film, with maximum 2Pr values about 19.7 μ C/cm2, which was almost 93% greater than that of specimen with the stoichiometric buffered one.

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Hsu FY, Leu CC, Chien CH, Hu CT. Seeding effect of SrBi ₂ Ta _2x O ₉ thin buffer layer on crystallization and electric properties of SrBi ₂ Ta ₂ O ₉ thin films. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 117-118. 4393187. (IEEE International Symposium on Applications of Ferroelectrics). doi: 10.1109/ISAF.2007.4393187