Seeding effect of SrBi 2 Ta 2x O 9 thin buffer layer on crystallization and electric properties of SrBi 2 Ta 2 O 9 thin films

F. Y. Hsu, C. C. Leu, Chao-Hsin Chien, C. T. Hu

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    The seeding effects of the pre-crystallized (RTP 750°C 30s) thin buffer layer, SrBi2Ta2xO9 (SBT, x=0.9, 1.0, and 1.1), regarding the structure, the morphology and the ferroelectric properties of the SrBi2Ta2O9 ferroelectric thin films on top of buffer layer, have been investigated. X-ray diffraction patterns revealed that the crystallinity of SrBi2Ta2O9 thin films were significant influenced by the buffer layers with various Ta contents. By adding a Ta deficient buffer layer, the preferred polar a-axis orientation and the uniformity of grain size within the SBT thin films were promoted. Meanwhile, the optimized ferroelectric properties were achieved from the SrBi 2Ta1 8O9 buffered SrBi2Ta 2O9 thin film, with maximum 2Pr values about 19.7 μ C/cm2, which was almost 93% greater than that of specimen with the stoichiometric buffered one.

    Original languageEnglish
    Title of host publication2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
    Pages117-118
    Number of pages2
    DOIs
    StatePublished - 2007
    Event2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
    Duration: 27 May 200731 May 2007

    Publication series

    NameIEEE International Symposium on Applications of Ferroelectrics

    Conference

    Conference2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
    Country/TerritoryJapan
    CityNara-city
    Period27/05/0731/05/07

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