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Second Breakdown of Vertical Power MOSFET's
Chen-Ming Hu
, Min Hwa Chi
International College of Semiconductor Technology
Research output
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Contribution to journal
›
Article
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peer-review
27
Scopus citations
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Keyphrases
Second Breakdown
100%
Vertical Power MOSFET
100%
Channel Current
33%
Microgroove
33%
Bipolar Transistor
33%
Base Resistance
33%
Four-terminal
33%
Parasitic Bipolar Transistor
33%
Safe Operating Space
33%
Avalanche multiplication
33%
Groove Test
33%
Engineering
Bipolar Transistor
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Good Agreement
50%
Operating Area
50%
Avalanche Multiplication
50%
Physics
Bipolar Transistor
100%
Field Effect Transistor
100%
Earth and Planetary Sciences
Bipolar Transistor
100%
V Groove
50%