SCR device with double-triggered technique for on-chip ESD protection in sub-quarter-micron silicided CMOS processes

Ming-Dou Ker*, Kuo Chun Hsu

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    11 Scopus citations

    Abstract

    Turn-on efficiency is the main concern for silicon-controlled rectifier (SCR) devices used as on-chip electrostatic discharge (ESD) protection circuit, especially in deep sub-quarter-micron CMOS processes with much thinner gate oxide. A novel double-triggered technique is proposed to speed up the turn-on speed of SCR devices for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide in sub-quarter-micron CMOS processes. From the experimental results, the switching voltage and turn-on time of such double-triggered SCR (DT_SCR) device has been confirmed to be significantly reduced by this double-triggered technique.

    Original languageEnglish
    Pages (from-to)58-68
    Number of pages11
    JournalIEEE Transactions on Device and Materials Reliability
    Volume3
    Issue number3
    DOIs
    StatePublished - 1 Sep 2003

    Keywords

    • Double-triggered technique
    • Electrostatic discharge (ESD)
    • ESD protection circuit
    • Silicon-controlled rectifier (SCR)

    Fingerprint

    Dive into the research topics of 'SCR device with double-triggered technique for on-chip ESD protection in sub-quarter-micron silicided CMOS processes'. Together they form a unique fingerprint.

    Cite this