TY - GEN
T1 - SCR device for on-chip ESD protection in RF power amplifier
AU - Lin, Chun Yu
AU - Ker, Ming-Dou
PY - 2013/12/23
Y1 - 2013/12/23
N2 - To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a low-capacitance, high-robust, and good-latchup-immune ESD protection device was proposed in this work. The proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.
AB - To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a low-capacitance, high-robust, and good-latchup-immune ESD protection device was proposed in this work. The proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.
KW - Electrostatic discharge (ESD)
KW - power amplifier (PA)
KW - radio-frequency (RF)
KW - silicon-controlled rectifier (SCR)
UR - http://www.scopus.com/inward/record.url?scp=84890525792&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2013.6628124
DO - 10.1109/EDSSC.2013.6628124
M3 - Conference contribution
AN - SCOPUS:84890525792
SN - 9781467325233
T3 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Y2 - 3 June 2013 through 5 June 2013
ER -