Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes

Shiyang Zhu; Jingde Chen; H. Y. Yu; S. J. Whang; J. H. Chen; C. Shen; M. F. Li; S. J. Lee; Chunxiang Zhu; D. S.H. Chan; Anyan Du; C. H. Tung; Jagar Singh; Albert Chin; D. L. Kwong

doi:10.1109/ICSICT.2004.1434952

Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes

Shiyang Zhu^*, Jingde Chen, H. Y. Yu, S. J. Whang, J. H. Chen, C. Shen, M. F. Li, S. J. Lee, Chunxiang Zhu, D. S.H. Chan, Anyan Du, C. H. Tung, Jagar Singh, Albert Chin, D. L. Kwong

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Bulk Schottky suicide source/drain n- and p-MOS transistors (SSDTs) with EOT=2.0-2.5nm HfO ₂ gate dielectric and HfN/TaN metal gate have been successfully demonstrated using a low temperature process. P-SSDTs with PtSi suicide show excellent electrical performance of I _on ∼10 ⁷-10 ⁸ and subthreshold slop of 66 mV/dec. N-SSDTs with YbSi _2-x silicide have also demonstrated a very promising characteristic with a recorded high I _on/I _off radio of∼ 10 ⁷ and subthreshold slope of 75mV/dec. To the best of our knowledge, these are the best SSDTs data reported so far. The implant free low temperature process relaxes the thermal budget of high-K dielectric and metal gate materials. Our results are expected to be further improved when using ultra-thin-body (UTB) SOI structures, -showing great potential of this low temperature process SSDTs for future sub-tenth micron CMOS technology.

Original language	English
Pages	53-56
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2004.1434952
State	Published - Oct 2004
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	18/10/04 → 21/10/04

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/ICSICT.2004.1434952

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Zhu, S., Chen, J., Yu, H. Y., Whang, S. J., Chen, J. H., Shen, C., Li, M. F., Lee, S. J., Zhu, C., Chan, D. S. H., Du, A., Tung, C. H., Singh, J., Chin, A., & Kwong, D. L. (2004). Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes. 53-56. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China. https://doi.org/10.1109/ICSICT.2004.1434952

@conference{5b390a12e1144a309183bcf0a35c7782,

title = "Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes",

abstract = "Bulk Schottky suicide source/drain n- and p-MOS transistors (SSDTs) with EOT=2.0-2.5nm HfO 2 gate dielectric and HfN/TaN metal gate have been successfully demonstrated using a low temperature process. P-SSDTs with PtSi suicide show excellent electrical performance of I on ∼10 7-10 8 and subthreshold slop of 66 mV/dec. N-SSDTs with YbSi 2-x silicide have also demonstrated a very promising characteristic with a recorded high I on/I off radio of∼ 10 7 and subthreshold slope of 75mV/dec. To the best of our knowledge, these are the best SSDTs data reported so far. The implant free low temperature process relaxes the thermal budget of high-K dielectric and metal gate materials. Our results are expected to be further improved when using ultra-thin-body (UTB) SOI structures, -showing great potential of this low temperature process SSDTs for future sub-tenth micron CMOS technology.",

author = "Shiyang Zhu and Jingde Chen and Yu, {H. Y.} and Whang, {S. J.} and Chen, {J. H.} and C. Shen and Li, {M. F.} and Lee, {S. J.} and Chunxiang Zhu and Chan, {D. S.H.} and Anyan Du and Tung, {C. H.} and Jagar Singh and Albert Chin and Kwong, {D. L.}",

year = "2004",

month = oct,

doi = "10.1109/ICSICT.2004.1434952",

language = "English",

pages = "53--56",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

}

Zhu, S, Chen, J, Yu, HY, Whang, SJ, Chen, JH, Shen, C, Li, MF, Lee, SJ, Zhu, C, Chan, DSH, Du, A, Tung, CH, Singh, J, Chin, A & Kwong, DL 2004, 'Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes', Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 18/10/04 - 21/10/04 pp. 53-56. https://doi.org/10.1109/ICSICT.2004.1434952

TY - CONF

T1 - Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes

AU - Zhu, Shiyang

AU - Chen, Jingde

AU - Yu, H. Y.

AU - Whang, S. J.

AU - Chen, J. H.

AU - Shen, C.

AU - Li, M. F.

AU - Lee, S. J.

AU - Zhu, Chunxiang

AU - Chan, D. S.H.

AU - Du, Anyan

AU - Tung, C. H.

AU - Singh, Jagar

AU - Chin, Albert

AU - Kwong, D. L.

PY - 2004/10

Y1 - 2004/10

N2 - Bulk Schottky suicide source/drain n- and p-MOS transistors (SSDTs) with EOT=2.0-2.5nm HfO 2 gate dielectric and HfN/TaN metal gate have been successfully demonstrated using a low temperature process. P-SSDTs with PtSi suicide show excellent electrical performance of I on ∼10 7-10 8 and subthreshold slop of 66 mV/dec. N-SSDTs with YbSi 2-x silicide have also demonstrated a very promising characteristic with a recorded high I on/I off radio of∼ 10 7 and subthreshold slope of 75mV/dec. To the best of our knowledge, these are the best SSDTs data reported so far. The implant free low temperature process relaxes the thermal budget of high-K dielectric and metal gate materials. Our results are expected to be further improved when using ultra-thin-body (UTB) SOI structures, -showing great potential of this low temperature process SSDTs for future sub-tenth micron CMOS technology.

AB - Bulk Schottky suicide source/drain n- and p-MOS transistors (SSDTs) with EOT=2.0-2.5nm HfO 2 gate dielectric and HfN/TaN metal gate have been successfully demonstrated using a low temperature process. P-SSDTs with PtSi suicide show excellent electrical performance of I on ∼10 7-10 8 and subthreshold slop of 66 mV/dec. N-SSDTs with YbSi 2-x silicide have also demonstrated a very promising characteristic with a recorded high I on/I off radio of∼ 10 7 and subthreshold slope of 75mV/dec. To the best of our knowledge, these are the best SSDTs data reported so far. The implant free low temperature process relaxes the thermal budget of high-K dielectric and metal gate materials. Our results are expected to be further improved when using ultra-thin-body (UTB) SOI structures, -showing great potential of this low temperature process SSDTs for future sub-tenth micron CMOS technology.

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DO - 10.1109/ICSICT.2004.1434952

M3 - Paper

AN - SCOPUS:21644481799

SP - 53

EP - 56

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes

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