Schottky-barrier height of iridium silicide

I. Ohdomari; King-Ning Tu; F. M. D'Heurle; T. S. Kuan; S. Petersson

doi:10.1063/1.90256

Schottky-barrier height of iridium silicide

I. Ohdomari^*, King-Ning Tu, F. M. D'Heurle, T. S. Kuan, S. Petersson

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500°C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the silicides measured. The high value leads us to conclude that the silicide does not follow the linear relation which exists between barrier height and heat of formation of most other silicides.

Original language	English
Pages (from-to)	1028-1030
Number of pages	3
Journal	Applied Physics Letters
Volume	33
Issue number	12
DOIs	https://doi.org/10.1063/1.90256
State	Published - 1 Dec 1978

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title = "Schottky-barrier height of iridium silicide",

abstract = "Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500°C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the silicides measured. The high value leads us to conclude that the silicide does not follow the linear relation which exists between barrier height and heat of formation of most other silicides.",

author = "I. Ohdomari and King-Ning Tu and D'Heurle, {F. M.} and Kuan, {T. S.} and S. Petersson",

year = "1978",

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T1 - Schottky-barrier height of iridium silicide

AU - Ohdomari, I.

AU - Tu, King-Ning

AU - D'Heurle, F. M.

AU - Kuan, T. S.

AU - Petersson, S.

PY - 1978/12/1

Y1 - 1978/12/1

N2 - Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500°C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the silicides measured. The high value leads us to conclude that the silicide does not follow the linear relation which exists between barrier height and heat of formation of most other silicides.

AB - Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500°C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the silicides measured. The high value leads us to conclude that the silicide does not follow the linear relation which exists between barrier height and heat of formation of most other silicides.

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DO - 10.1063/1.90256

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VL - 33

SP - 1028

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Schottky-barrier height of iridium silicide

Abstract

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