Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs

M. C. Wang; T. C. Chang; Po-Tsun Liu; Y. Y. Li; R. W. Xiao; L. F. Lin; J. R. Chen

doi:10.1149/1.2756303

Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs

M. C. Wang^*, T. C. Chang, Po-Tsun Liu, Y. Y. Li, R. W. Xiao, L. F. Lin, J. R. Chen

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd m2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.

Original language	English
Pages (from-to)	J123-J125
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	10
DOIs	https://doi.org/10.1149/1.2756303
State	Published - Jan 2007

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title = "Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs",

abstract = "For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd m2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.",

author = "Wang, {M. C.} and Chang, {T. C.} and Po-Tsun Liu and Li, {Y. Y.} and Xiao, {R. W.} and Lin, {L. F.} and Chen, {J. R.}",

year = "2007",

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T1 - Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs

AU - Wang, M. C.

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Li, Y. Y.

AU - Xiao, R. W.

AU - Lin, L. F.

AU - Chen, J. R.

PY - 2007/1

Y1 - 2007/1

N2 - For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd m2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.

AB - For effectively reducing the off-state signal loss resulting from the a-Si:H thin film transistors' (TFTs) photo leakage current, the a-Si:H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd m2 cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.

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U2 - 10.1149/1.2756303

DO - 10.1149/1.2756303

M3 - Article

AN - SCOPUS:34547837529

SN - 1099-0062

VL - 10

SP - J123-J125

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Schottky barrier height for the photo leakage current transformation of a-Si:H TFTs

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