Scheme for Multi-Chiplet Integration with Low Thermal Budget by Asymmetric Cu-Cu Bonding with Au Passivation Bonding Structure

Zhong Jie Hong, Ming Wei Weng, Chih Han Chen, Mu Ping Hsu, Han Wen Hu, Tai Yu Lin, Ying Chan Hung, Kuan Neng Chen

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This study proposed a multi-chiplet integration scheme using Cu–Cu bonding with a low thermal budget by utilizing an asymmetric passivation bonding structure. The single-sided passivation structure was achieved through one-sided heating thermal compression bonding at 150 °C; the bonding quality was enhanced by the passivation layer with small grain size. The bonding interface of the single-sided passivation structure was analyzed through transmission electron microscope, and the corresponding mechanism was inferred. Compared with original passivation structures, the single-sided passivation structure not only enhanced bonding quality but also provided higher bonding strength, and the contact resistance was lower than Cu-Cu direct bonding. Therefore, the single-sided passivation structure with low thermal budget, high bonding strength and high throughput can be applied to multi-chiplet integration.

Original languageEnglish
Pages (from-to)1
Number of pages1
JournalIeee Electron Device Letters
DOIs
StateAccepted/In press - 2023

Keywords

  • 3D integration
  • Bonding
  • Chiplet
  • Cu bonding
  • Gold
  • Heating systems
  • Passivation
  • Passivation structure
  • Periodic structures
  • Reliability
  • Substrates

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