Scalable Spin-to-Charge Conversion Effect in the Inverse Spin Hall Nanodevice

Yu Lon Lin, Tzu Chuan Hsin, Yu Hui Wu, Yuan-Chen Sun, Yuan Chieh Tseng*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A major challenge to realizing a highly energy-efficient magneto-electric spin-orbit (MESO) logic device is the small signal response of ferromagnetic spin state readout by inverse spin Hall (ISH) effect, which makes it difficult to meet the practical device design. Here, we present a scalable T-shape W/CoFeB ISH device with tunable spin-to-charge conversion effects. The ISH signal appeared to increase with reducing the W channel width, achieving 40mΩ with a channel width down to 95nm. Tuning the sputtering dc power can further adjust the ISH signal. Our finding provides a pathway to improve the ISH signal in patterned devices that is beneficial for developing next-generation spintronic logic devices.

Original languageEnglish
Title of host publication2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350338362
DOIs
StatePublished - 2023
Event2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Sendai, Japan
Duration: 15 May 202319 May 2023

Publication series

Name2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings

Conference

Conference2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023
Country/TerritoryJapan
CitySendai
Period15/05/2319/05/23

Keywords

  • CoFeB
  • inverse spin Hall
  • Magneto-electric spin-orbit (MESO) logic device
  • spin-to-charge conversion

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