Scalability of Phase Change Materials in Nanostructure Template

Wei Zhang, Biyun L. Jackson, Ke Sun, Jae Young Lee, Shyh Jer Huang, Hsin-Chieh Yu, Sheng Po Chang, Shoou Jinn Chang, Ya Hong Xie*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The scalability of Ine one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual Inenanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. Ineof progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3 for Ine The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving.

Original languageEnglish
Article number253296
JournalInternational Journal of Photoenergy
StatePublished - 1 Jan 2015


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