Saturation of the free carrier absorption in ZnTe Crystals

S. A. Ku; C. M. Tu; W. C. Chu; Chih-Wei Luo; Kaung-Hsiung Wu; A. Yabushita; C. C. Chi; T. Kobayashi

doi:10.1364/OE.21.013930

Saturation of the free carrier absorption in ZnTe Crystals

S. A. Ku, C. M. Tu, W. C. Chu, Chih-Wei Luo^*, Kaung-Hsiung Wu, A. Yabushita, C. C. Chi, T. Kobayashi

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

This study systematically investigates the influence of free carriers on the generation of THz in ZnTe crystals, over a wide range of pumping fluences. As the pumping fluence is increased (< 6.36 mJ/cm²), the concentration of free carriers gradually increases and the THz output power is saturated, as clearly demonstrated by the time delay in the THz temporal waveforms, the changes in the THz spectral weight and the redshift in the PL spectra. For high pumping fluences (> 6.36 mJ/cm²), spectacularly, there is a significant quadratic increase in the THz output power when the pumping fluence is increased, as well as at low pumping fluences of < 0.58 mJ/cm², because of the saturation of free carriers.

Original language	English
Pages (from-to)	13930-13937
Number of pages	8
Journal	Optics Express
Volume	21
Issue number	12
DOIs	https://doi.org/10.1364/OE.21.013930
State	Published - 17 Jun 2013

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@article{bd4e20a9f7e3401aaab6269f4c7f2456,

title = "Saturation of the free carrier absorption in ZnTe Crystals",

abstract = "This study systematically investigates the influence of free carriers on the generation of THz in ZnTe crystals, over a wide range of pumping fluences. As the pumping fluence is increased (< 6.36 mJ/cm2), the concentration of free carriers gradually increases and the THz output power is saturated, as clearly demonstrated by the time delay in the THz temporal waveforms, the changes in the THz spectral weight and the redshift in the PL spectra. For high pumping fluences (> 6.36 mJ/cm2), spectacularly, there is a significant quadratic increase in the THz output power when the pumping fluence is increased, as well as at low pumping fluences of < 0.58 mJ/cm2, because of the saturation of free carriers.",

author = "Ku, {S. A.} and Tu, {C. M.} and Chu, {W. C.} and Chih-Wei Luo and Kaung-Hsiung Wu and A. Yabushita and Chi, {C. C.} and T. Kobayashi",

year = "2013",

month = jun,

day = "17",

doi = "10.1364/OE.21.013930",

language = "English",

volume = "21",

pages = "13930--13937",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "12",

}

TY - JOUR

T1 - Saturation of the free carrier absorption in ZnTe Crystals

AU - Ku, S. A.

AU - Tu, C. M.

AU - Chu, W. C.

AU - Luo, Chih-Wei

AU - Wu, Kaung-Hsiung

AU - Yabushita, A.

AU - Chi, C. C.

AU - Kobayashi, T.

PY - 2013/6/17

Y1 - 2013/6/17

N2 - This study systematically investigates the influence of free carriers on the generation of THz in ZnTe crystals, over a wide range of pumping fluences. As the pumping fluence is increased (< 6.36 mJ/cm2), the concentration of free carriers gradually increases and the THz output power is saturated, as clearly demonstrated by the time delay in the THz temporal waveforms, the changes in the THz spectral weight and the redshift in the PL spectra. For high pumping fluences (> 6.36 mJ/cm2), spectacularly, there is a significant quadratic increase in the THz output power when the pumping fluence is increased, as well as at low pumping fluences of < 0.58 mJ/cm2, because of the saturation of free carriers.

AB - This study systematically investigates the influence of free carriers on the generation of THz in ZnTe crystals, over a wide range of pumping fluences. As the pumping fluence is increased (< 6.36 mJ/cm2), the concentration of free carriers gradually increases and the THz output power is saturated, as clearly demonstrated by the time delay in the THz temporal waveforms, the changes in the THz spectral weight and the redshift in the PL spectra. For high pumping fluences (> 6.36 mJ/cm2), spectacularly, there is a significant quadratic increase in the THz output power when the pumping fluence is increased, as well as at low pumping fluences of < 0.58 mJ/cm2, because of the saturation of free carriers.

UR - http://www.scopus.com/inward/record.url?scp=84879373460&partnerID=8YFLogxK

U2 - 10.1364/OE.21.013930

DO - 10.1364/OE.21.013930

M3 - Article

C2 - 23787582

AN - SCOPUS:84879373460

SN - 1094-4087

VL - 21

SP - 13930

EP - 13937

JO - Optics Express

JF - Optics Express

IS - 12

ER -

Saturation of the free carrier absorption in ZnTe Crystals

Abstract

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