"S-shaped" photoluminescence emission shift in Cu(In,Ga)Se 2 thin films

Y. K. Liao; S. Y. Kuo; F. I. Lai; W. T. Lin; D. H. Hsieh; D. W. Chiu; Hao-Chung Kuo

doi:10.1364/ACP.2012.AF4B.32

"S-shaped" photoluminescence emission shift in Cu(In,Ga)Se ₂ thin films

Y. K. Liao^*, S. Y. Kuo, F. I. Lai, W. T. Lin, D. H. Hsieh, D. W. Chiu, Hao-Chung Kuo

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se₂ thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.

Original language	English
Article number	AF4B.32
Journal	Asia Communications and Photonics Conference, ACP
DOIs	https://doi.org/10.1364/ACP.2012.AF4B.32
State	Published - 2012
Event	2012 Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China Duration: 7 Nov 2012 → 10 Nov 2012

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10.1364/ACP.2012.AF4B.32

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@article{de118ea9dbf24134b9bb4beb2cca539a,

title = "{"}S-shaped{"} photoluminescence emission shift in Cu(In,Ga)Se 2 thin films",

abstract = "We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.",

author = "Liao, {Y. K.} and Kuo, {S. Y.} and Lai, {F. I.} and Lin, {W. T.} and Hsieh, {D. H.} and Chiu, {D. W.} and Hao-Chung Kuo",

year = "2012",

doi = "10.1364/ACP.2012.AF4B.32",

language = "English",

journal = "Asia Communications and Photonics Conference, ACP",

issn = "2162-108X",

note = "2012 Asia Communications and Photonics Conference, ACP 2012 ; Conference date: 07-11-2012 Through 10-11-2012",

}

TY - JOUR

T1 - "S-shaped" photoluminescence emission shift in Cu(In,Ga)Se 2 thin films

AU - Liao, Y. K.

AU - Kuo, S. Y.

AU - Lai, F. I.

AU - Lin, W. T.

AU - Hsieh, D. H.

AU - Chiu, D. W.

AU - Kuo, Hao-Chung

PY - 2012

Y1 - 2012

N2 - We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.

AB - We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.

UR - http://www.scopus.com/inward/record.url?scp=84875190292&partnerID=8YFLogxK

U2 - 10.1364/ACP.2012.AF4B.32

DO - 10.1364/ACP.2012.AF4B.32

M3 - Conference article

AN - SCOPUS:84875190292

SN - 2162-108X

JO - Asia Communications and Photonics Conference, ACP

JF - Asia Communications and Photonics Conference, ACP

M1 - AF4B.32

T2 - 2012 Asia Communications and Photonics Conference, ACP 2012

Y2 - 7 November 2012 through 10 November 2012

ER -

"S-shaped" photoluminescence emission shift in Cu(In,Ga)Se ₂ thin films

Abstract

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