S-Curve Engineering for ON-State Performance Using Anti-Ferroelectric/Ferroelectric Stack Negative-Capacitance FinFET

Shih En Huang; Pin Su; Chen-Ming Hu

doi:10.1109/TED.2021.3099090

S-Curve Engineering for ON-State Performance Using Anti-Ferroelectric/Ferroelectric Stack Negative-Capacitance FinFET

Shih En Huang, Pin Su^*, Chen-Ming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This work investigates the S-curve engineering by exploiting the anti-ferroelectric (AFE)/ferroelectric (FE) stack negative-capacitance FinFET (NC-FinFET) to improve both the subthreshold swing and ON-state current ( ION ). The capacitance matching and ON-state performance are evaluated using a short-channel AFE/FE stack NC-FinFET model. Our study indicates that the AFE/FE gate-stack can theoretically achieve surprising improvements to the OFF-state current ( IOFF ) and ION relative to International Roadmap for Devices and Systems (IRDS) projections. There is a significant long-term advantage to integrated circuit (IC) power consumption and speed if materials with certain AFE and FE characteristics can be developed and introduced into IC manufacturing.

Original language	English
Article number	9502416
Pages (from-to)	4787-4792
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	9
DOIs	https://doi.org/10.1109/TED.2021.3099090
State	Published - Sep 2021

Keywords

Anti-ferroelectric (AFE)
FinFET
metal-ferroelectric-insulator-semiconductor (MFIS)-type negative-capacitance field-effect transistor (NCFET)

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10.1109/TED.2021.3099090

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title = "S-Curve Engineering for ON-State Performance Using Anti-Ferroelectric/Ferroelectric Stack Negative-Capacitance FinFET",

abstract = "This work investigates the S-curve engineering by exploiting the anti-ferroelectric (AFE)/ferroelectric (FE) stack negative-capacitance FinFET (NC-FinFET) to improve both the subthreshold swing and ON-state current ( ION ). The capacitance matching and ON-state performance are evaluated using a short-channel AFE/FE stack NC-FinFET model. Our study indicates that the AFE/FE gate-stack can theoretically achieve surprising improvements to the OFF-state current ( IOFF ) and ION relative to International Roadmap for Devices and Systems (IRDS) projections. There is a significant long-term advantage to integrated circuit (IC) power consumption and speed if materials with certain AFE and FE characteristics can be developed and introduced into IC manufacturing.",

keywords = "Anti-ferroelectric (AFE), FinFET, metal-ferroelectric-insulator-semiconductor (MFIS)-type negative-capacitance field-effect transistor (NCFET)",

author = "Huang, {Shih En} and Pin Su and Chen-Ming Hu",

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year = "2021",

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doi = "10.1109/TED.2021.3099090",

language = "English",

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AU - Su, Pin

AU - Hu, Chen-Ming

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Y1 - 2021/9

N2 - This work investigates the S-curve engineering by exploiting the anti-ferroelectric (AFE)/ferroelectric (FE) stack negative-capacitance FinFET (NC-FinFET) to improve both the subthreshold swing and ON-state current ( ION ). The capacitance matching and ON-state performance are evaluated using a short-channel AFE/FE stack NC-FinFET model. Our study indicates that the AFE/FE gate-stack can theoretically achieve surprising improvements to the OFF-state current ( IOFF ) and ION relative to International Roadmap for Devices and Systems (IRDS) projections. There is a significant long-term advantage to integrated circuit (IC) power consumption and speed if materials with certain AFE and FE characteristics can be developed and introduced into IC manufacturing.

AB - This work investigates the S-curve engineering by exploiting the anti-ferroelectric (AFE)/ferroelectric (FE) stack negative-capacitance FinFET (NC-FinFET) to improve both the subthreshold swing and ON-state current ( ION ). The capacitance matching and ON-state performance are evaluated using a short-channel AFE/FE stack NC-FinFET model. Our study indicates that the AFE/FE gate-stack can theoretically achieve surprising improvements to the OFF-state current ( IOFF ) and ION relative to International Roadmap for Devices and Systems (IRDS) projections. There is a significant long-term advantage to integrated circuit (IC) power consumption and speed if materials with certain AFE and FE characteristics can be developed and introduced into IC manufacturing.

KW - Anti-ferroelectric (AFE)

KW - FinFET

KW - metal-ferroelectric-insulator-semiconductor (MFIS)-type negative-capacitance field-effect transistor (NCFET)

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S-Curve Engineering for ON-State Performance Using Anti-Ferroelectric/Ferroelectric Stack Negative-Capacitance FinFET

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Keywords

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