RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

Wun Cheng Luo*, Jen Chieh Liu, Hsien Tsung Feng, Yen Chuan Lin, Jiun Jia Huang, Kuan Liang Lin, Tuo-Hung Hou

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    18 Scopus citations

    Abstract

    This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.

    Original languageEnglish
    Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
    Pages9.5.1-9.5.4
    Number of pages4
    DOIs
    StatePublished - 10 Dec 2012
    Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
    Duration: 10 Dec 201213 Dec 2012

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Conference

    Conference2012 IEEE International Electron Devices Meeting, IEDM 2012
    Country/TerritoryUnited States
    CitySan Francisco, CA
    Period10/12/1213/12/12

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