Abstract
The optically pumped laser using InGaAs/GaAsSb W-type quantum wells is demonstrated with a threshold power density similar to 40 kW/cm(2). The L-L curve and the dramatic line width shrinkage above threshold confirm, for the first time, mid-infrared lasing in this structure on InP substrates. The lasing wavelength at 2.56 mu m is the longest lasing wavelength at room temperature for the interband transition of InP-based material system.
Original language | English |
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Pages (from-to) | 1145-1147 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 24 |
Issue number | 13 |
DOIs | |
State | Published - 1 Jul 2012 |
Keywords
- InP-based; midinfrared lasers; optically pumped; type-II "W" type quantum wells