Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors

Hsiao-Wen Zan; Chang Hung Li; Chun Cheng Yeh; Ming Zhi Dai; Hsin-Fei Meng; Chuang Chuang Tsai

doi:10.1063/1.3601488

Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors

Hsiao-Wen Zan^*, Chang Hung Li, Chun Cheng Yeh, Ming Zhi Dai, Hsin-Fei Meng, Chuang Chuang Tsai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

96 Scopus citations

Abstract

An organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a -IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a -IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a -IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a -IGZO TFT technology.

Original language	English
Article number	253503
Journal	Applied Physics Letters
Volume	98
Issue number	25
DOIs	https://doi.org/10.1063/1.3601488
State	Published - 20 Jun 2011

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title = "Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors",

abstract = "An organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a -IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a -IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a -IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a -IGZO TFT technology.",

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AU - Zan, Hsiao-Wen

AU - Li, Chang Hung

AU - Yeh, Chun Cheng

AU - Dai, Ming Zhi

AU - Meng, Hsin-Fei

AU - Tsai, Chuang Chuang

PY - 2011/6/20

Y1 - 2011/6/20

N2 - An organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a -IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a -IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a -IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a -IGZO TFT technology.

AB - An organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a -IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a -IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a -IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a -IGZO TFT technology.

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VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

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Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors

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