Room-Temperature Fabrication of p-Type SnO Semiconductors Using Ion-Beam-Assisted Deposition

Keyphrases

• P-type 100%
• Semiconductors 100%
• Ion Beam Assisted Deposition 100%
• Room Temperature Fabrication 100%
• Annealing Process 60%
• High Mobility 60%
• SnO Films 60%
• SnOx 60%
• Ion Gun 40%
• Room Temperature 40%
• Microcrystals 40%
• Complex Interactions 20%
• Annealing 20%
• Oxygen Ions 20%
• Valence Band 20%
• Post-annealing 20%
• First-principles Calculations 20%
• Hole Mobility 20%
• P-type Semiconductor 20%
• SnO2 20%
• Conduction Path 20%
• Raman Spectra 20%
• Convertibility 20%
• Optical Band Gap 20%
• Current Flow 20%
• Ion Energy 20%
• Rectifying Characteristic 20%
• Hall Mobility 20%
• Densification 20%
• Anode Current 20%
• Oxygen Flow Rate 20%
• Grain Texture 20%
• Anode Voltage 20%
• Ion Density 20%
• Sn-rich 20%
• Air Annealing 20%
• Continuous Conduction 20%
• SnOx Thin Films 20%

Material Science

• Film 100%
• Ion Beam Assisted Deposition 100%
• Annealing 66%
• Density 33%
• Anode 33%
• Thin Films 16%
• Hole Mobility 16%
• Oxide Semiconductor 16%
• Hall Mobility 16%