Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode

Wen-Hao Chang; An Tai Chou; Wen Yen Chen; Hsiang Szu Chang; Tzu Min Hsu; Zingway Pei; Pan Shiu Chen; S. W. Lee; Li Shyue Lai; S. C. Lu; M. J. Tsai

doi:10.1109/ISCS.2003.1239940

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode

Wen-Hao Chang, An Tai Chou, Wen Yen Chen, Hsiang Szu Chang, Tzu Min Hsu, Zingway Pei, Pan Shiu Chen, S. W. Lee, Li Shyue Lai, S. C. Lu, M. J. Tsai

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report RT EL from Ge/Si QD light-emitting diodes (LED). The LEDs were fabricated in mesa-type structure, with silicon oxide layer on the top for surface/side wall passivation. Different passivation processes have been employed. We found that the EL intensities are relatively less sensitive to temperature in the range of 80 to 300 K. At RT, an internal quantum efficiency up to 0.015 % has been achieved.

Original language	English
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	129-130
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239940
State	Published - 2003
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 25 Aug 2003 → 27 Aug 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Conference

Conference	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	25/08/03 → 27/08/03

Keywords

Current density
Displays
Electroluminescence
Industrial electronics
Light emitting diodes
Oxidation
Passivation
Physics
Quantum dots
Radiative recombination

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10.1109/ISCS.2003.1239940

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Chang, W.-H., Chou, A. T., Chen, W. Y., Chang, H. S., Hsu, T. M., Pei, Z., Chen, P. S., Lee, S. W., Lai, L. S., Lu, S. C., & Tsai, M. J. (2003). Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 129-130). Article 1239940 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239940

@inproceedings{715ed1b4b574429b8bc1a10629ce9584,

title = "Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode",

abstract = "We report RT EL from Ge/Si QD light-emitting diodes (LED). The LEDs were fabricated in mesa-type structure, with silicon oxide layer on the top for surface/side wall passivation. Different passivation processes have been employed. We found that the EL intensities are relatively less sensitive to temperature in the range of 80 to 300 K. At RT, an internal quantum efficiency up to 0.015 % has been achieved.",

keywords = "Current density, Displays, Electroluminescence, Industrial electronics, Light emitting diodes, Oxidation, Passivation, Physics, Quantum dots, Radiative recombination",

author = "Wen-Hao Chang and Chou, {An Tai} and Chen, {Wen Yen} and Chang, {Hsiang Szu} and Hsu, {Tzu Min} and Zingway Pei and Chen, {Pan Shiu} and Lee, {S. W.} and Lai, {Li Shyue} and Lu, {S. C.} and Tsai, {M. J.}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCS.2003.1239940",

language = "English",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "129--130",

booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",

address = "美國",

}

Chang, W-H, Chou, AT, Chen, WY, Chang, HS, Hsu, TM, Pei, Z, Chen, PS, Lee, SW, Lai, LS, Lu, SC & Tsai, MJ 2003, Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239940, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 129-130, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 25/08/03. https://doi.org/10.1109/ISCS.2003.1239940

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode. / Chang, Wen-Hao; Chou, An Tai; Chen, Wen Yen et al.
2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 129-130 1239940 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode

AU - Chang, Wen-Hao

AU - Chou, An Tai

AU - Chen, Wen Yen

AU - Chang, Hsiang Szu

AU - Hsu, Tzu Min

AU - Pei, Zingway

AU - Chen, Pan Shiu

AU - Lee, S. W.

AU - Lai, Li Shyue

AU - Lu, S. C.

AU - Tsai, M. J.

PY - 2003

Y1 - 2003

N2 - We report RT EL from Ge/Si QD light-emitting diodes (LED). The LEDs were fabricated in mesa-type structure, with silicon oxide layer on the top for surface/side wall passivation. Different passivation processes have been employed. We found that the EL intensities are relatively less sensitive to temperature in the range of 80 to 300 K. At RT, an internal quantum efficiency up to 0.015 % has been achieved.

AB - We report RT EL from Ge/Si QD light-emitting diodes (LED). The LEDs were fabricated in mesa-type structure, with silicon oxide layer on the top for surface/side wall passivation. Different passivation processes have been employed. We found that the EL intensities are relatively less sensitive to temperature in the range of 80 to 300 K. At RT, an internal quantum efficiency up to 0.015 % has been achieved.

KW - Current density

KW - Displays

KW - Electroluminescence

KW - Industrial electronics

KW - Light emitting diodes

KW - Oxidation

KW - Passivation

KW - Physics

KW - Quantum dots

KW - Radiative recombination

UR - http://www.scopus.com/inward/record.url?scp=84943574695&partnerID=8YFLogxK

U2 - 10.1109/ISCS.2003.1239940

DO - 10.1109/ISCS.2003.1239940

M3 - Conference contribution

AN - SCOPUS:84943574695

T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 129

EP - 130

BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Chang WH, Chou AT, Chen WY, Chang HS, Hsu TM, Pei Z et al. Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode. In 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 129-130. 1239940. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCS.2003.1239940

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode

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Keywords

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