Room-temperature and high-quality HfO2/SiO2gate stacked film grown by neutral beam enhanced atomic layer deposition

Beibei Ge, Daisuke Ohori, Yi Ho Chen, Takuya Ozaki, Kazuhiko Endo, Yi-Ming Li, Jenn-Hwan Tarng, Seiji Samukawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This study reports the fabrication of the high-quality hafnium dioxide (HfO2) film at room temperature (20-30 °C) using the neutral beam enhanced atomic layer deposition (NBEALD) we developed. The HfO2 film was fabricated using tetrakis(ethylmethylamino)hafnium (TEMAH) as the Hf precursor and O2 NB as the oxidant. Argon gas was used for the carrier and purge gases. The HfO2 film-deposition process consists of 5-s TEMAH feed, 5-s Ar purge, 5-s O2 gas injection, 20-s O2 neutral beam irradiation, and 5-s Ar purge. The HfO2 film exhibited a saturated growth per cycle of 0.18 nm/cycle and a high-quality film with low C contamination (2.7%), N contamination (3.9%), and a good O/Hf ratio (2.0) was achieved. The film also had an ideal refractive index of 1.9. Additionally, continuously grown high-quality HfO2 and silicon dioxide (SiO2) gate oxide films (stacked HfO2/SiO2 gate oxide film) were successfully fabricated at room temperature. This film has the potential to decrease the thermal budget, thus enabling high flexibility when designing semiconductor structures. These findings demonstrate the effectiveness of our NBEALD in forming high-k gate stack structures.

Original languageEnglish
Article number022405
Pages (from-to)1-9
Number of pages9
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume40
Issue number2
DOIs
StatePublished - 1 Mar 2022

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