Role of Nitrogen in Ferroelectricity of Hf_xZr_1-xO₂-Based Capacitors With Metal-Ferroelectric-Insulator-Metal Structure

Keyphrases

• Ammonia 16%
• Annealing Temperature 16%
• Capacitors 100%
• CexZr1-xO2 100%
• Ferroelectric Insulator 100%
• Generation Results 16%
• Material Analysis 16%
• Metal Structure 100%
• Metal-oxide Interface 50%
• N-doping 16%
• NH3 Plasma 50%
• Nitrogen N 16%
• Oxygen Vacancy 16%
• Oxygen Vacancy Mobility 16%
• Plasma Nitridation 50%
• Post Metal Annealing 33%
• Stress Immunity 16%
• Stress Voltage 16%
• Vacancy Generation 16%
• Voltage Stress 16%

Material Science

• Capacitor 100%
• Ferroelectric Material 100%
• Ferroelectricity 100%
• Metal-Oxide Interface 75%
• Nitriding 75%
• Oxygen Vacancy 50%
• Thin Films 75%