Robustness of a Topologically Protected Surface State in a Sb 2 Te 2 Se Single Crystal

Chao Kuei Lee*, Cheng Maw Cheng, Shih Chang Weng, Wei Chuan Chen, Ku Ding Tsuei, Shih Hsun Yu, Mitch Ming Chi Chou, Ching Wen Chang, Li Wei Tu, Hung Duen Yang, Chih-Wei Luo, Marin M. Gospodinov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

A topological insulator (TI) is a quantum material in a new class with attractive properties for physical and technological applications. Here we derive the electronic structure of highly crystalline Sb 2 Te 2 Se single crystals studied with angle-resolved photoemission spectra. The result of band mapping reveals that the Sb 2 Te 2 Se compound behaves as a p-type semiconductor and has an isolated Dirac cone of a topological surface state, which is highly favored for spintronic and thermoelectric devices because of the dissipation-less surface state and the decreased scattering from bulk bands. More importantly, the topological surface state and doping level in Sb 2 Te 2 Se are difficult to alter for a cleaved surface exposed to air; the robustness of the topological surface state defined in our data indicates that this Sb 2 Te 2 Se compound has a great potential for future atmospheric applications.

Original languageEnglish
Article number36538
JournalScientific reports
Volume6
DOIs
StatePublished - 18 Nov 2016

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