Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment

Tung Ming Pan; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/55.852956

Robust ultrathin oxynitride dielectrics by NH₃ nitridation and N₂O RTA treatment

Tung Ming Pan, Tan Fu Lei, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

In this paper, a method to grow robust ultrathin (E_OT = 28 angstroms) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH₃ with additional N₂O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.

Original language	English
Pages (from-to)	378-380
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	21
Issue number	8
DOIs	https://doi.org/10.1109/55.852956
State	Published - Aug 2000

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abstract = "In this paper, a method to grow robust ultrathin (EOT = 28 angstroms) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH3 with additional N2O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.",

author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Tien-Sheng Chao",

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AU - Lei, Tan Fu

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AB - In this paper, a method to grow robust ultrathin (EOT = 28 angstroms) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH3 with additional N2O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.

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Robust ultrathin oxynitride dielectrics by NH₃ nitridation and N₂O RTA treatment

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