@inproceedings{4f6a9fdb47834f83a099ae8c450a6200,
title = "Robust Recovery Scheme for MFIS-FeFETs at Optimal Timing with Prolonged Endurance: Fast-Unipolar Pulsing (100 ns), Nearly Zero Memory Window Loss (0.02 %), and Self-Tracking Circuit Design",
abstract = "This work systematically demonstrates a novel recovery scheme for MFIS-FeFET memory arrays involving device fabrication and circuit integration. For the first time, the timing to initiate recovery to prolong the endurance of FeFETs is studied. A 100-ns fast-unipolar pulsing (FUP) recovery treatment at optimized timing is demonstrated with significantly extending endurance cycles by a factor of 102, together with a nearly zero loss (0.02 %) in memory window (MW) per recovery period and a low MW fluctuation. An ultra-low recovery-induced time loss ratio of 5×10-5 % is achieved. Based on the developed scheme, we propose a self-tracking recovery circuit design utilizing current-mode memory sensing to monitor the degree of fatigue and automatically trigger the recovery operation.",
author = "Wu, {C. H.} and J. Liu and Zheng, {X. T.} and Tseng, {Y. M.} and M. Kobayashi and Hu, {V. P.H.} and Su, {C. J.}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Electron Devices Meeting, IEDM 2023 ; Conference date: 09-12-2023 Through 13-12-2023",
year = "2023",
doi = "10.1109/IEDM45741.2023.10413819",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 International Electron Devices Meeting, IEDM 2023",
address = "United States",
}