Robust PH sensing characteristics of RINOS structure with SM 2O3 sensing membrane and rapid thermal annealing for biosensor application

Jer Chyi Wang*, Chao Sung Lai, Chyuan Haur Kao, Hui Yu Shih, Tseng Fu Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This investigation proposes a novel Sm2O3/Si 3N4/SiO2/Si RINOS device with an ONO (oxide-nitride-oxide) structure and Sm2O3 as the sensing membrane. To improve the sensing properties, the Sm2O3 was treated by RTA. Post deposition annealing (PDA) at 700°C increased the pH sensitivity of a 4nm-thick Sm2O3 sensing membrane from 41.69 to 55.44 mV/pH and improved the hysteresis and drift characteristics. Stress at - 17V for 10 s, further enhanced the pH sensitivity to 70.13 mV/pH, which was higher than the Nernstian value. Moreover, this device can be operated by applying program/erase (P/E) stress to increase/reduce the pH sensitivity stable for over 100 P/E cyclings. The novel RINOS structure with Sm 2O3 sensing membrane and RTAis a promising candidate for sensing ultra small signals in the human body micro-fluid applications.

Original languageEnglish
Title of host publicationISOB 2011 - Proceedings of the 1st International Symposium on Bioengineering
Pages27-33
Number of pages7
DOIs
StatePublished - 2011
Event1st International Symposium on Bioengineering, ISOB 2011 - Singapore, Singapore
Duration: 19 Jan 201119 Jan 2011

Publication series

NameISOB 2011 - Proceedings of the 1st International Symposium ISOB 2011 - Proceedings of the 1st International Symposium on Bioengineering

Conference

Conference1st International Symposium on Bioengineering, ISOB 2011
Country/TerritorySingapore
CitySingapore
Period19/01/1119/01/11

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