Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots

J. S. Wang; R. S. Hsiao; Kuo-Jui Lin; L. Wei; Y. T. Wu; A. R. Kovsh; N. A. Maleev; A. V. Sakharov; D. A. Livshits; Jenn-Fang Chen; J. Y. Chi

doi:10.1002/pssc.200303085

Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots

J. S. Wang^*, R. S. Hsiao, Kuo-Jui Lin, L. Wei, Y. T. Wu, A. R. Kovsh, N. A. Maleev, A. V. Sakharov, D. A. Livshits, Jenn-Fang Chen, J. Y. Chi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Stacking of InAs/InGaAs/GaAs QDs up to 5 layers has been developed to realize ground state lasing with noticeable output power in the laser diodes with broad and low contrast wave guide (0.6 μm Al_0.3Ga _0.7As/GaAs). Lasers emitting at 1310 nm were grown by molecular beam epitaxy and processed into 5 μm wide ridge waveguide diodes. Single lateral mode continuous wave operation was achieved in a 3 mm long diode with as-cleaved facets. The threshold current of 26 mA (J_th = 173 A/cm²), a slope efficiency of 0.43 W/A (η_dif = 45%), a characteristic temperature of 85 K, a vertical beam divergence of 45°, and I-V characteristics with turn-on voltages of 1.0 V and series resistance of 1.5 × 10^-4 Ω cm² were realized in one device simultaneously.

Original language	English
Pages (from-to)	1339-1342
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	4
DOIs	https://doi.org/10.1002/pssc.200303085
State	Published - 2003
Event	2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan Duration: 30 Sep 2002 → 3 Oct 2002

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@article{f275da4d296a4dfaa687a6679bd142ec,

title = "Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots",

abstract = "Stacking of InAs/InGaAs/GaAs QDs up to 5 layers has been developed to realize ground state lasing with noticeable output power in the laser diodes with broad and low contrast wave guide (0.6 μm Al0.3Ga 0.7As/GaAs). Lasers emitting at 1310 nm were grown by molecular beam epitaxy and processed into 5 μm wide ridge waveguide diodes. Single lateral mode continuous wave operation was achieved in a 3 mm long diode with as-cleaved facets. The threshold current of 26 mA (Jth = 173 A/cm2), a slope efficiency of 0.43 W/A (ηdif = 45%), a characteristic temperature of 85 K, a vertical beam divergence of 45°, and I-V characteristics with turn-on voltages of 1.0 V and series resistance of 1.5 × 10-4 Ω cm2 were realized in one device simultaneously.",

author = "Wang, {J. S.} and Hsiao, {R. S.} and Kuo-Jui Lin and L. Wei and Wu, {Y. T.} and Kovsh, {A. R.} and Maleev, {N. A.} and Sakharov, {A. V.} and Livshits, {D. A.} and Jenn-Fang Chen and Chi, {J. Y.}",

year = "2003",

doi = "10.1002/pssc.200303085",

language = "English",

pages = "1339--1342",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "4",

note = "2nd International Conference on Semiconductor Quantum Dots, QD 2002 ; Conference date: 30-09-2002 Through 03-10-2002",

}

TY - JOUR

T1 - Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots

AU - Wang, J. S.

AU - Hsiao, R. S.

AU - Lin, Kuo-Jui

AU - Wei, L.

AU - Wu, Y. T.

AU - Kovsh, A. R.

AU - Maleev, N. A.

AU - Sakharov, A. V.

AU - Livshits, D. A.

AU - Chen, Jenn-Fang

AU - Chi, J. Y.

PY - 2003

Y1 - 2003

N2 - Stacking of InAs/InGaAs/GaAs QDs up to 5 layers has been developed to realize ground state lasing with noticeable output power in the laser diodes with broad and low contrast wave guide (0.6 μm Al0.3Ga 0.7As/GaAs). Lasers emitting at 1310 nm were grown by molecular beam epitaxy and processed into 5 μm wide ridge waveguide diodes. Single lateral mode continuous wave operation was achieved in a 3 mm long diode with as-cleaved facets. The threshold current of 26 mA (Jth = 173 A/cm2), a slope efficiency of 0.43 W/A (ηdif = 45%), a characteristic temperature of 85 K, a vertical beam divergence of 45°, and I-V characteristics with turn-on voltages of 1.0 V and series resistance of 1.5 × 10-4 Ω cm2 were realized in one device simultaneously.

AB - Stacking of InAs/InGaAs/GaAs QDs up to 5 layers has been developed to realize ground state lasing with noticeable output power in the laser diodes with broad and low contrast wave guide (0.6 μm Al0.3Ga 0.7As/GaAs). Lasers emitting at 1310 nm were grown by molecular beam epitaxy and processed into 5 μm wide ridge waveguide diodes. Single lateral mode continuous wave operation was achieved in a 3 mm long diode with as-cleaved facets. The threshold current of 26 mA (Jth = 173 A/cm2), a slope efficiency of 0.43 W/A (ηdif = 45%), a characteristic temperature of 85 K, a vertical beam divergence of 45°, and I-V characteristics with turn-on voltages of 1.0 V and series resistance of 1.5 × 10-4 Ω cm2 were realized in one device simultaneously.

UR - http://www.scopus.com/inward/record.url?scp=51349090614&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303085

DO - 10.1002/pssc.200303085

M3 - Conference article

AN - SCOPUS:51349090614

SN - 1610-1634

SP - 1339

EP - 1342

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 4

T2 - 2nd International Conference on Semiconductor Quantum Dots, QD 2002

Y2 - 30 September 2002 through 3 October 2002

ER -

Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots

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