Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots

J. S. Wang*, R. S. Hsiao, Kuo-Jui Lin, L. Wei, Y. T. Wu, A. R. Kovsh, N. A. Maleev, A. V. Sakharov, D. A. Livshits, Jenn-Fang Chen, J. Y. Chi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations


Stacking of InAs/InGaAs/GaAs QDs up to 5 layers has been developed to realize ground state lasing with noticeable output power in the laser diodes with broad and low contrast wave guide (0.6 μm Al0.3Ga 0.7As/GaAs). Lasers emitting at 1310 nm were grown by molecular beam epitaxy and processed into 5 μm wide ridge waveguide diodes. Single lateral mode continuous wave operation was achieved in a 3 mm long diode with as-cleaved facets. The threshold current of 26 mA (Jth = 173 A/cm2), a slope efficiency of 0.43 W/A (ηdif = 45%), a characteristic temperature of 85 K, a vertical beam divergence of 45°, and I-V characteristics with turn-on voltages of 1.0 V and series resistance of 1.5 × 10-4 Ω cm2 were realized in one device simultaneously.

Original languageEnglish
Pages (from-to)1339-1342
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number4
StatePublished - 1 Dec 2003
Event2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
Duration: 30 Sep 20023 Oct 2002


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