RF noise scaling trend of MOSFETs from 0.5 μm to 0.13 μm technology nodes

M. C. King; M. T. Yang; C. W. Kuo; Yun Chang; Albert Chin

doi:10.1109/MWSYM.2004.1335783

RF noise scaling trend of MOSFETs from 0.5 μm to 0.13 μm technology nodes

M. C. King^*, M. T. Yang, C. W. Kuo, Yun Chang, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

27 Scopus citations

Abstract

As scaling down the MOSFET, the f_t, keeps increasing but the minimum noise figure (NF_min) is difficult to scale down due to the increasing gate resistance. In this study, the NF_min can be continuously reduced to 0.13 μm technology node (80 nm gate length) by optimizing finger number and channel width. Excellent NF_min of only 0.87 dB is measured with 4 μm finger width and multiple 72 fingers. In addition, high associated gain (22.5 dB), low RF noise (1.0 dB), and low power can be simultaneously achieved in 0.13 μm node MOSFETs using only 6 fingers that is impossible in 0.18 μm case. We have also predicted the future scaling trend of RF noise beyond 0.13 μm node from measured data and well calibrated Fukul's equation.

Original language	English
Pages (from-to)	9-12
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
DOIs	https://doi.org/10.1109/MWSYM.2004.1335783
State	Published - 20 Sep 2004
Event	2004 IEEE MITT-S International Microwave Symposium Digest - Fort Worth, TX, United States Duration: 6 Jun 2004 → 11 Jun 2004

Keywords

Associated gain
CMOS
F
Noise
Scaling trend

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10.1109/MWSYM.2004.1335783

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@article{754be7b078c14a4a8c9cb3c2d905f1d3,

title = "RF noise scaling trend of MOSFETs from 0.5 μm to 0.13 μm technology nodes",

abstract = "As scaling down the MOSFET, the ft, keeps increasing but the minimum noise figure (NFmin) is difficult to scale down due to the increasing gate resistance. In this study, the NFmin can be continuously reduced to 0.13 μm technology node (80 nm gate length) by optimizing finger number and channel width. Excellent NFmin of only 0.87 dB is measured with 4 μm finger width and multiple 72 fingers. In addition, high associated gain (22.5 dB), low RF noise (1.0 dB), and low power can be simultaneously achieved in 0.13 μm node MOSFETs using only 6 fingers that is impossible in 0.18 μm case. We have also predicted the future scaling trend of RF noise beyond 0.13 μm node from measured data and well calibrated Fukul's equation.",

keywords = "Associated gain, CMOS, F, Noise, Scaling trend",

author = "King, {M. C.} and Yang, {M. T.} and Kuo, {C. W.} and Yun Chang and Albert Chin",

year = "2004",

month = sep,

day = "20",

doi = "10.1109/MWSYM.2004.1335783",

language = "English",

volume = "1",

pages = "9--12",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE MITT-S International Microwave Symposium Digest ; Conference date: 06-06-2004 Through 11-06-2004",

}

TY - JOUR

T1 - RF noise scaling trend of MOSFETs from 0.5 μm to 0.13 μm technology nodes

AU - King, M. C.

AU - Yang, M. T.

AU - Kuo, C. W.

AU - Chang, Yun

AU - Chin, Albert

PY - 2004/9/20

Y1 - 2004/9/20

N2 - As scaling down the MOSFET, the ft, keeps increasing but the minimum noise figure (NFmin) is difficult to scale down due to the increasing gate resistance. In this study, the NFmin can be continuously reduced to 0.13 μm technology node (80 nm gate length) by optimizing finger number and channel width. Excellent NFmin of only 0.87 dB is measured with 4 μm finger width and multiple 72 fingers. In addition, high associated gain (22.5 dB), low RF noise (1.0 dB), and low power can be simultaneously achieved in 0.13 μm node MOSFETs using only 6 fingers that is impossible in 0.18 μm case. We have also predicted the future scaling trend of RF noise beyond 0.13 μm node from measured data and well calibrated Fukul's equation.

AB - As scaling down the MOSFET, the ft, keeps increasing but the minimum noise figure (NFmin) is difficult to scale down due to the increasing gate resistance. In this study, the NFmin can be continuously reduced to 0.13 μm technology node (80 nm gate length) by optimizing finger number and channel width. Excellent NFmin of only 0.87 dB is measured with 4 μm finger width and multiple 72 fingers. In addition, high associated gain (22.5 dB), low RF noise (1.0 dB), and low power can be simultaneously achieved in 0.13 μm node MOSFETs using only 6 fingers that is impossible in 0.18 μm case. We have also predicted the future scaling trend of RF noise beyond 0.13 μm node from measured data and well calibrated Fukul's equation.

KW - Associated gain

KW - CMOS

KW - F

KW - Noise

KW - Scaling trend

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U2 - 10.1109/MWSYM.2004.1335783

DO - 10.1109/MWSYM.2004.1335783

M3 - Conference article

AN - SCOPUS:4444353298

SN - 0149-645X

VL - 1

SP - 9

EP - 12

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2004 IEEE MITT-S International Microwave Symposium Digest

Y2 - 6 June 2004 through 11 June 2004

ER -

RF noise scaling trend of MOSFETs from 0.5 μm to 0.13 μm technology nodes

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Keywords

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